STGD18N40LZ STMicroelectronics, STGD18N40LZ Datasheet - Page 7

• Manufacturer Part Number: STGD18N40LZ
• Description: EAS 180 mJ - 390 V - internally clamped IGBT
• Manufacturer: STMicroelectronics

STGB18N40LZ, STGD18N40LZ, STGP18N40LZ
Figure 8.
Figure 10. Collector cut-off current vs.
Figure 12. Normalized gate threshold voltage
I
C
60
(A)
50
40
30
20
10
0
0
Output characteristics @ 175 °C
temperature
vs temperature
1
V
GE
2
= 8 V
3
T
C
V
= 175 °C
GE
4
= 5 V
V
V
V
GE
GE
GE
= 3.8 V
= 4.5 V
HV42400
5
= 4 V
V
CE
Doc ID 14322 Rev 5
(V)
6
Figure 9.
Figure 11. Normalized collector emitter
Figure 13. Normalized collector emitter on
I
I
C
C
40
40
(A)
(A)
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
1.0
1.0
1.5
1.5
V
V
Transfer characteristics
voltage vs temperature
voltage vs temperature
CE
CE
25°C
25°C
= 5V
= 5V
2.0
2.0
175°C
175°C
2.5
2.5
Electrical characteristics
3.0
3.0
3.5
3.5
-40°C
-40°C
4.0
4.0
4.5
4.5
HV38710
V
V
5.0
5.0
GE
GE
(V)
(V)
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