STD4NS25 STMicroelectronics, STD4NS25 Datasheet - Page 2

• Manufacturer Part Number: STD4NS25
• Description: N-CHANNEL 250V 0.9 OHM 4A DPAK MESH OVERLAY MOSFET
• Manufacturer: STMicroelectronics

STD4NS25
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/9
Rthj-case
Rthc-sink
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
I
I
C
DS(on)
C
E
GS(th)
D(on)
C
fs
I
GSS
DSS
AR
T
oss
AS
rss
iss
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
DD
I
V
V
V
V
V
V
V
V
I
D
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 2A
= Max Rating
= Max Rating, T
= V
> I
> I
= ±20V
= 10V, I
= 10V
= 25V, f = 1 MHz, V
D(on)
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
x R
D
= 2 A
GS
= 250µA
DS(on)max,
DS(on)max,
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
250
2
4
1
100
275
2.5
1.5
Max Value
120
Typ.
Typ.
Typ.
29.5
355
0.9
3.5
64
4
3
Max.
±100
Max.
Max.
1.1
10
1
4
°C/W
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
µA
µA
°C
nA
pF
pF
pF
A
V
V
A
S