STD4NS25 STMicroelectronics, STD4NS25 Datasheet - Page 3

• Manufacturer Part Number: STD4NS25
• Description: N-CHANNEL 250V 0.9 OHM 4A DPAK MESH OVERLAY MOSFET
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
t
I
d(Voff)
SD
r(Voff)
d(on)
Q
Q
RRM
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
t
t
rr
gs
gd
c
r
f
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Turn-off- Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(see test circuit, Figure 3)
V
R
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
clamp
G
G
= 4.7
= 4.7
= 4.7
= 4 A, V
= 4 A, di/dt = 100A/µs
= 125 V, I
= 200V, I
= 10V
= 30V, T
= 125V, I
Test Conditions
= 200V, I
Test Conditions
Test Conditions
V
V
V
GS
GS
j
GS
GS
D
D
D
= 150°C
= 0
= 4 A,
= 2 A,
= 10 V
D
= 2 A
= 10V
= 10V
Thermal Impedance
= 4 A,
Min.
Min.
Min.
Typ.
Typ.
Typ.
10.5
21.5
124
3.2
7.5
0.5
7.2
12
18
19
70
13
10
Max.
Max.
Max.
1.5
27
16
4
STD4NS25
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/9