BUL903EDFP STMicroelectronics, BUL903EDFP Datasheet

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BUL903EDFP

Manufacturer Part Number
BUL903EDFP
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BUL903EDFP
Manufacturer:
NEC
Quantity:
5 400
APPLICATIONS
DESCRIPTION
The BUL903EDFP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed to operate without
baker clamp and transil protection. This enables
saving from 2 up to 10 components in the
application.
ABSOLUTE MAXIMUM RATINGS
September 2003
Symbol
INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
FOUR LAMP ELECTRONIC BALLAST FOR
120 V MAINS IN PUSH-PULL
CONFIGURATION
V
V
V
V
T
P
I
I
CES
CEO
EBO
I
CM
I
BM
T
isol
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at Tc = 25
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
<5 ms)
C
p
= 0)
<5 ms)
B
BE
o
= 0)
C
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
TO-220FP
1500
BUL903EDFP
900
400
150
35
7
5
8
2
4
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
V
C
C
1/7

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BUL903EDFP Summary of contents

Page 1

... FOUR LAMP ELECTRONIC BALLAST FOR 120 V MAINS IN PUSH-PULL CONFIGURATION DESCRIPTION The BUL903EDFP is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The device has been designed to operate without baker clamp and transil protection. This enables saving from components in the application ...

Page 2

... BUL903EDFP THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off EBO Current ( Collector-Emitter (BR)CES Breakdown Voltage ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) ...

Page 3

... Safe Operating Area Output Characteristics DC Current Gain Derating Curve DC Current Gain Collector Emitter Saturation Voltage BUL903EDFP 3/7 ...

Page 4

... BUL903EDFP Base Emitter Saturation Voltage Switching Times Inductive Load 4/7 Switching Times Resistive Load Reverse Biased SOA ...

Page 5

... Figure 1: Resistive Load Switching Test Circuit Figure 2 : Energy Rating Test Circuit Figure 3: Inductive Load Switching Test Circuit BUL903EDFP 5/7 ...

Page 6

... BUL903EDFP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 6/7 TO-220FP MECHANICAL DATA mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 16 30.6 10.6 16.4 9.3 3 inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.098 0.108 0.017 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.204 ...

Page 7

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com BUL903EDFP 7/7 ...

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