Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4509AGH-HF

Manufacturer Part NumberAP4509AGH-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4509AGH-HF datasheet
 

Specifications of AP4509AGH-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v10Rds(on) / Max(m?) Vgs@4.5v16
Qg (nc)15Qgs (nc)3
Qgd (nc)10Id(a)14
Pd(w)3.13ConfigurationComplementary N-P
PackageTO-252-4L  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1/D2
S1
G1
S2
G2
TO-252-4L
N-channel
3
3
1
Parameter
3
AP4509AGH-HF
Halogen-Free Product
N-CH BV
30V
DSS
R
10mΩ
DS(ON)
I
14A
D
P-CH BV
-30V
DSS
R
23mΩ
DS(ON)
I
-9.5A
D
D1
G1
G2
S1
Rating
Units
P-channel
30
-30
+20
+20
14
-9.5
11
-7.6
50
-40
3.13
-55 to 150
-55 to 150
Value
Unit
6
℃/W
40
℃/W
201008031
D2
S2
V
V
A
A
A
W
1

AP4509AGH-HF Summary of contents

  • Page 1

    ... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 AP4509AGH-HF Halogen-Free Product N-CH BV 30V DSS R 10mΩ DS(ON) I 14A D P-CH BV -30V DSS R 23mΩ DS(ON ...

  • Page 2

    ... AP4509AGH-HF N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

  • Page 3

    ... =- =-24V DS V =-4. =-15V =3.3Ω =-10V =-25V DS f=1.0MHz Test Conditions 2 I =-2.6A =-5A dI/dt=-100A/µs AP4509AGH-HF Min. Typ. - =-250uA - 1260 2000 - ...

  • Page 4

    ... AP4509AGH-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 5

    ... Duty factor=0.5 100us 0.2 0.1 0.1 1ms 0.05 10ms 100ms 0.02 0.01 1s Single Pulse 0.01 DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V 4. d(off) f Fig 12. Gate Charge Waveform AP4509AGH-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T Peak ...

  • Page 6

    ... AP4509AGH-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 0.2 1ms 0.1 10ms 0.05 100ms 0.02 0.01 1s 0.01 DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance V -4. d(off) f Fig 12. Gate Charge Waveform AP4509AGH-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0 Single Pulse T Duty factor = t/T Peak ...