AP4509AGH-HF Advanced Power Electronics Corp., AP4509AGH-HF Datasheet - Page 5

• Manufacturer Part Number: AP4509AGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): 14
• Pd(w): 3.13
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this
area limited by
Single Pulse
V
90%
10%
V
T
R
DS(ON)
DS
GS
A
=25
I
V
D
DS
V
Q
o
=7A
0.1
10
C
t
=24V
DS
G
d(on)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
t
r
20
1
t
d(off)
30
10
t
f
100ms
100us
10ms
1ms
DC
1s
100
40
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
1000
0.1
800
600
400
200
1
0.0001
0
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
4.5V
Single Pulse
0.02
0.01
V
Duty factor=0.5
0.2
0.05
0.1
0.001
G
5
Q
V
GS
DS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
G
13
GD
AP4509AGH-HF
Charge
1
17
P
DM
Duty factor = t/T
Peak T
Rthja=75℃/W
10
21
j
= P
t
DM
f=1.0MHz
T
x R
100
25
thja
C
C
C
+ T
Q
oss
iss
rss
A
1000
29
5