AP4509AGH-HF Advanced Power Electronics Corp., AP4509AGH-HF Datasheet - Page 6

• Manufacturer Part Number: AP4509AGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): 14
• Pd(w): 3.13
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
AP4509AGH-HF
40
30
20
10
0
35
31
27
23
19
15
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
0.2
-V
Reverse Diode
-V
1
-V
DS
T
SD
4
GS
j
=150
, Drain-to-Source Voltage (V)
0.4
T
, Source-to-Drain Voltage (V)
,Gate-to-Source Voltage (V)
A
= 25
o
C
2
0.6
o
C
6
I
T
D
A
0.8
= -5 A
=25
3
T
o
j
=25
C
1
8
o
C
V
4
G
1.2
= -4.0V
-7.0V
-6.0V
-5.0V
-10V
10
1.4
5
2.4
2.0
1.6
1.2
0.8
0.4
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= -8A
= -10V
1
v.s. Junction Temperature
Junction Temperature
-V
T
T
DS
0
j
0
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
2
A
= 150
o
3
50
50
C
4
100
100
V
o
o
C)
C)
G
= -4.0V
5
-7.0V
-6.0V
-5.0V
-10V
6
150
150
6