AP4509AGH-HF Advanced Power Electronics Corp., AP4509AGH-HF Datasheet - Page 4

• Manufacturer Part Number: AP4509AGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGH-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): 14
• Pd(w): 3.13
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
AP4509AGH-HF
40
30
20
10
15
13
11
10
9
7
0
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
3
0.2
V
Reverse Diode
DS
V
V
T
1
4
GS
SD
, Drain-to-Source Voltage (V)
j
0.4
=150
T
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
A
= 25
5
o
C
0.6
o
C
2
6
I
T
D
A
0.8
= 7 A
=25
7
o
T
C
j
1
=25
3
8
o
V
C
G
1.2
= 4.0V
9
7.0V
6.0V
5.0V
10V
1.4
4
10
2.4
2.0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
40
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= 11 A
=10V
v.s. Junction Temperature
Junction Temperature
V
1
DS
T
T
0
0
j
T
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
A
, Junction Temperature (
= 150
2
o
C
50
50
3
100
100
o
o
C)
V
4
C)
G
= 4.0V
7.0V
6.0V
5.0V
10V
150
150
5
4