BSL202SN Infineon Technologies, BSL202SN Datasheet

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BSL202SN

Manufacturer Part Number
BSL202SN
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSL202SN

Package
TSOP-6
Vds (max)
20.0 V
Rds (on) (max) (@10v)
-
Rds (on) (max) (@4.5v)
22.0 mOhm
Rds (on) (max) (@2.5v)
36.0 mOhm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSL202SN
Manufacturer:
Infineon
Quantity:
9 000
Part Number:
BSL202SN
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSL202SNL6327
Manufacturer:
Infineon
Quantity:
2 400
Part Number:
BSL202SNL6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev 1.08
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSL202SN
®
2 Small-Signal-Transistor
Package
TSOP-6
1)
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327: 3000 pcs/ reel
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
JESD22-A114 -HBM
page 1
A
A
A
j,max
A
=7.5 A, R
=7.5 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
GS
=16 V,
=25 Ω
V
R
I
Product Summary
D
DS
DS(on),max
Marking
sPD
V
V
0 (0V to 250V)
Lead Free
Yes
GS
GS
-55 ... 150
55/150/56
=4.5 V
=2.5 V
260 °C
Value
±12
7.5
6.0
30
30
6
2
1
2
TSOP-6
Packing
Non dry
3
BSL202SN
6
7.5
20
22
36
5
Unit
A
mJ
kV/µs
V
W
°C
V
A
2011-05-23
4

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BSL202SN Summary of contents

Page 1

... =7 = /dt di /dt =200 A/µs, =150 °C T j,max V GS =25 ° tot stg JESD22-A114 -HBM page 1 BSL202SN DS(on),max GS =2 7.5 TSOP Marking Lead Free Packing sPD Yes Non dry Value 7.5 6.0 30 ...

Page 2

... GSS DS( |>2 DS(on)max (single layer, 70 µm thick) copper area for drain page 2 BSL202SN Values Unit min. typ. max K 230 - - 62 0.7 0.95 1.2 μ 100 - - 100 mΩ ...

Page 3

... plateau I S =25 ° S,pulse = =7 =25 ° = =7 /dt =100 A/µ page 3 BSL202SN Values Unit min. typ. max. - 863 1147 pF - 278 370 - 1.82 2. 1.1 1.6 - 5.8 8 ...

Page 4

... A 4 Max. transient thermal impedance =f(t Z thJA p parameter µs 100 µ [V] DS page 4 BSL202SN ≥4 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 160 ...

Page 5

... [ Typ. forward transconductance =f ° [V] GS page 5 BSL202SN ); T =25 ° 1 2 3 [A] D =25 ° [ ...

Page 6

... Forward characteristics of reverse diode =25°C =f parameter Ciss 0 10 Coss -1 10 Crss - [V] DS page 6 BSL202SN ); =30 µ typ 100 140 T [° °C 150 °C, 98% 150 °C 25 °C, 98% 0.4 0.8 1 ...

Page 7

... Gate charge waveforms s(th) Q g(th) 60 100 140 [°C] j page 7 BSL202SN ); I =7.5 A pulsed [nC] gate ate 2011-05-23 ...

Page 8

... Package Outline: 2.9 ±0.2 (2.25) (0.35 0.35 0.95 1.9 Footprint: 0.5 0.95 Remark: Wave soldering possible dep. on customers process conditions Dimensions in mm Rev 1.08 TSOP6 B 0.1 MAX. +0.1 -0.05 0 Packaging: Pin 1 marking HLG09283 page 8 BSL202SN 1.1 MAX. A +0.1 0.15 -0.06 0 GPX09300 0.2 4 3.15 1.15 CPWG5899 2011-05-23 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.08 page 9 BSL202SN 2011-05-23 ...

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