HS1-0506RH-Q Intersil Corporation, HS1-0506RH-Q Datasheet

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HS1-0506RH-Q

Manufacturer Part Number
HS1-0506RH-Q
Description
Radiation Hardened Single 16/Differential 8 Channel CMOS Analog Multiplexer
Manufacturer
Intersil Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HS1-0506RH-Q
Manufacturer:
INTERS
Quantity:
285
September 1997
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
Features
• Low On Resistance 400Ω Max
• Wide Analog Signal Range ±15V
• TTL/CMOS Compatible 2.4V (Logic “1”)
• Access Time 1000ns Max
• 44V Maximum Power Supply
• Break-Before-Make Switching
• No Latch-up
• Gamma Dose 1 x 10
Applications
• Data Acquisition Systems
• Precision Instrumentation
• Demultiplexing
• Selector Switch
Ordering Information
Pinouts
HS1-0506RH-Q
HS1-0507RH-Q
NUMBER
PART
ADDRESS A3
HS-0506RH 28 LEAD CERAMIC DUAL-IN-LINE
VSUPPLY
IN 16
IN 15
IN 14
IN 13
IN 12
IN 11
IN 10
GND
FRIT SEAL PACKAGE (CerDIP)
IN 9
NC
NC
NC
MIL-STD-1835 GDIP1-T28
10
11
12
13
14
1
2
3
4
5
6
7
8
9
TEMPERATURE
|
-55
-55
Intersil (and design) is a registered trademark of Intersil Americas Inc.
4
®
o
o
RANGE
RAD (Si)
TOP VIEW
C to 125
C to 125
o
o
C
C
28
27
26
25
24
23
22
21
20
19
18
17
16
15
28 Lead CerDIP
28 Lead CerDIP
OUT
-VSUPPLY
IN 8
IN 7
IN 6
IN 5
IN 4
IN 3
IN 2
IN 1
ENABLE
ADDRESS A0
ADDRESS A1
ADDRESS A2
PACKAGE
Radiation Hardened Single 16/Differential
1
Description
These radiation hardened monolithic CMOS multiplexers
each include an array of sixteen analog switches, a digital
decode circuit for channel selection, voltage reference for
logic thresholds, and an ENABLE input for device selection
when several multiplexers are present.
The Dielectric Isolation (DI) process used in fabrication of
these devices eliminates the problem of latchup. Also, DI
offers
capacitance than conventional junction isolated CMOS. The
switching threshold for each digital input is established by an
internal +5V reference, providing a guaranteed minimum
2.4V for logic “1” and maximum 0.8V for logic “0”. This allows
direct interface without pullup resistors to signals from most
logic families: CMOS, TTL, DTL and some PMOS. For
protection against transient overvoltage, the digital inputs
include a series 200Ω resistor and diode clamp to each
supply. The HS-0506RH is a sixteen channel single-ended
multiplexer, and the HS-0507RH is an eight channel
differential version. If input overvoltage protection is needed,
the
recommended. For further information see Application Notes
520 and 521.
8 Channel CMOS Analog Multiplexer
HS-0506RH
much
HS-0507RH 28 LEAD CERAMIC DUAL-IN-LINE
+VSUPPLY
OUT B
IN 8B
IN 7B
IN 6B
IN 5B
IN 4B
IN 3B
IN 2B
IN 1B
GND
FRIT SEAL PACKAGE (CerDIP)
lower
NC
NC
NC
MIL-STD-1835 GDIP1-T28
10
11
12
13
14
1
2
3
4
5
6
7
8
9
or
HS-0507RH
substate
TOP VIEW
HS-0507RH
leakage
Spec Number
28
27
26
25
24
23
22
21
20
19
18
17
16
15
File Number
multiplexers
OUT A
-VSUPPLY
IN 8A
IN 7A
IN 6A
IN 5A
IN 4A
IN 3A
IN 2A
IN 1A
ENABLE
ADDRESS A0
ADDRESS A1
ADDRESS A2
and
parasitic
518860
4028.1
are

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HS1-0506RH-Q Summary of contents

Page 1

... Gamma Dose RAD (Si) Applications • Data Acquisition Systems • Precision Instrumentation • Demultiplexing • Selector Switch Ordering Information PART TEMPERATURE NUMBER RANGE o o HS1-0506RH-Q - 125 HS1-0507RH-Q - 125 C Pinouts HS-0506RH 28 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE (CerDIP) MIL-STD-1835 GDIP1-T28 ...

Page 2

Functional Diagrams HS-0506RH IN1 IN2 DECODER/ DRIVER IN16 5V LEVEL REF SHIFT † † † †DIGITAL INPUT PROTECTION HS-0506RH TRUTH TABLE ...

Page 3

Specifications HS-0506RH, HS-0507RH Absolute Maximum Ratings Voltage Between Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . +44V +VSUPPLY to Ground . ...

Page 4

Specifications HS-0506RH, HS-0507RH TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device tested at +VSUPPLY = +15V. -VSUPPLY = -15V, VEN = 2.4V, Unless Otherwise Specified. PARAMETERS SYMBOL Positive Supply I(+) VA = 0V, VEN = 2.4V Current Negative Supply I(-) ...

Page 5

Specifications HS-0506RH, HS-0507RH TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device tested at +VSUPPLY = +15V, -VSUPPLY = -15V, VEN = 2.4V, Unless Otherwise Specified PARAMETERS SYMBOL Capacitance Address Input f = 1MHz Capacitance: COS V+ ...

Page 6

Specifications HS-0506RH, HS-0507RH TABLE 4A. POST 10K RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device tested at +VSUPPLY = +15V. -VSUPPLY = -15V, VEN = 2.4V, Unless Otherwise Specified. PARAMETERS SYMBOL Negative Supply Current I(-) Standby Positive +ISBY Supply Current Standby ...

Page 7

Specifications HS-0506RH, HS-0507RH TABLE 5. BURN-IN DELTA PARAMETERS (T Device tested Per Table 1. PARAMETERS Input Leakage Current Leakage Current into the Source Terminal of an ‘‘OFF’’ Switch Leakage Current into the Drain Terminal of an ‘‘OFF’’ Switch Leakage Current ...

Page 8

Intersil Space Level Product Flow -Q Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) (Note 1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, ...

Page 9

Test Circuits INPUT LEAKAGE CURRENT V+ GND V- OUT IIL IIL IIL IIH IIH IIH VAL = 0.8V; VAH = 2.4V UNUSED INPUTS TO GND ID(ON) V+ GND V- ...

Page 10

Switching Waveforms 3.5V ADDRESS DRIVE (VA OUTPUT 50% 50% tOPEN FIGURE 1. BREAK-BEFORE-MAKE DELAY (tOPEN) 3.5V ADDRESS DRIVE (VA) 50% 0V OUTPUT +10V 90% -10V tA FIGURE 2. ACCESS TIME vs LOGIC LEVEL (HIGH) 3.5V ENABLE DRIVE 50% ...

Page 11

Burn-Circuits DYNAMIC V1 = +15V minimum, +16V maximum V2 = -15V maximum, -16V minimum R1 10kΩ, ± 5%, 1/4 ...

Page 12

Schematic Diagrams (HS-0506RH ONLY) ENABLE 200Ω AIN FIGURE 5. ADDRESS INPUT BUFFER LEVER SHIFTER HS-0506RH, HS-0507RH ...

Page 13

Schematic Diagrams (Continued) VL Q10N Q9P FROM DECODE IN FROM DECODE HS-0506RH, HS-0507RH P15 Q2P Q3P Q1P Q5N Q6N R2 N12 Q11P D3 R3 P16 Q12N N13 N14 N15 V- FIGURE 6. TTL REFERENCE CIRCUIT N18 V+ N17 N19 P17 ...

Page 14

Metallization Topology DIE DIMENSIONS 129 x 19 mils METALLIZATION: Type: Al Å Å ± 2k Thickness: 16k GLASSIVATION: Type: Nitride Å Å ± 0.7k Thickness: 7k WORST CASE CURRENT DENSITY < 2 A/cm TRANSISTOR ...

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