STGD3NB60ST4 STMicroelectronics, STGD3NB60ST4 Datasheet

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STGD3NB60ST4

Manufacturer Part Number
STGD3NB60ST4
Description
N-Channel 3 A - 600 V - DPAK PowerMESH IGBT
Manufacturer
STMicroelectronics
Datasheet

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STGD3NB60ST4
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STGD3NB60ST4
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DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
performances. The suffix “S” identifies a family
optimized achieve minimum on-voltage drop for low
frequency applications (<1kHz).
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
August 2002
STGP3NB60S
STGD3NB60S
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
VERY LOW ON-VOLTAGE DROP (V
OFF LOSSES INCLUDE TAIL CURRENT
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (SMD VERSION)
MOTOR CONTROL
LIGHT DIMMER
STATIC RELAYS
Symbol
I
V
V
CM
P
V
T
CES
ECR
TOT
I
I
T
stg
GE
C
C
TYPE
j
( )
Collector-Emitter Voltage (V
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
IGBTs, with outstanding
600 V
600 V
V
CES
Parameter
V
< 1.5 V
< 1.5 V
CE(sat)
C
= 25°C
N-CHANNEL 3A - 600V - TO-220 / DPAK
GS
cesat
= 0)
3 A
3 A
I
C
C
C
)
= 25°C
= 100°C
STGP3NB60S
INTERNAL SCHEMATIC DIAGRAM
65
TO-220
–65 to 150
PowerMESH™ IGBT
( ) Pulse width limited by safe operating area
Value
0.32
1
600
±20
150
20
24
6
3
2
STGD3NB60S
STGP3NB60S
3
STGD3NB60S
45
DPAK
1
3
W/°C
Unit
°C
°C
W
V
V
V
A
A
A
1/10

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STGD3NB60ST4 Summary of contents

Page 1

... OFF LOSSES INCLUDE TAIL CURRENT ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD VERSION) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the ™ PowerMESH IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (< ...

Page 2

STGP3NB60S - STGD3NB60S THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-h Thermal Resistance Case-heatsink Typ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter V Collectro-Emitter Breakdown BR(CES) Voltage I Collector cut-off ...

Page 3

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol Parameter t Cross-over Time Off Voltage Rise Time r off Delay Time d ff Fall Time t f Turn-off Switching Loss E (**) off t Cross-over Time ...

Page 4

STGP3NB60S - STGD3NB60S Safe Operating Area for TO-220 Thermal Impedance for TO-220 Thermal Impedance for DPAK 4/10 Safe Operating Area for DPAK ...

Page 5

Output Characteristics Transconductance Collector-Emitter On Voltage vs Collector Current STGP3NB60S - STGD3NB60S Transfer Characteristics Collector-Emitter On Voltage vs Temperature Gate Threshold vs Temperature 5/10 ...

Page 6

STGP3NB60S - STGD3NB60S Normalized Breakdown Voltage vs Temperature Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Temperature 6/10 Capacitance Variations Total Switching Losses vs Gate Resistance Total Switching Losses vs Collector Current ...

Page 7

Switching Off Safe Operating Area Fig. 1: Gate Charge test Circuit STGP3NB60S - STGD3NB60S Fig. 2: Test Circuit For Inductive Load Switching 7/10 ...

Page 8

STGP3NB60S - STGD3NB60S DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 ...

Page 9

TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 9.35 L2 0 STGP3NB60S - STGD3NB60S ...

Page 10

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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