STGD3NB60ST4 STMicroelectronics, STGD3NB60ST4 Datasheet - Page 2

• Manufacturer Part Number: STGD3NB60ST4
• Description: N-Channel 3 A - 600 V - DPAK PowerMESH IGBT
• Manufacturer: STMicroelectronics

STGP3NB60S - STGD3NB60S
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
2/10
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
(di/dt)
V
V
Rthc-h
BR(CES)
t
I
CE(sat)
C
Q
I
Q
GE(th)
C
C
Eon
d(on)
CES
GES
Q
I
g
CL
oes
t
res
GE
GC
ies
fs
r
G
on
Collectro-Emitter Breakdown
Voltage
Collector cut-off
(V
Gate-Emitter Leakage
Current (V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
GE
= 0)
Parameter
Parameter
Parameter
Parameter
CE
= 0)
I
V
V
V
V
V
V
V
V
V
V
R
V
R
V
V
C
V
CE
CE
GE
CE
GE
GE
CE
CE
GE
clamp
CC
CC
GE
G
G
CE
= 250 µA, V
= 1K
= 1K
= 480 V, I
= Max Rating, T
= Max Rating, T
= V
= 25 V
= 480 V, I
= ±20V , V
= 15V, I
= 15V, I
= 15V
= 480 V, I
= 15 V, Tj = 125°C
= 25V, f = 1 MHz, V
= 480 V , Tj = 150°C
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GE
, I
, V
,
C
C
C
I
C
GE
C
C
C
= 3 A
= 1 A
GE
= 250µA
= 3 A, R
CE
= 3 A
= 3 A,
= 3 A
= 15 V
= 0
= 0
C
C
= 25 °C
= 125 °C
TO-220
G
1.92
62.5
=1K
GE
= 0
Min.
Min.
Min.
Min.
600
2.5
1.7
12
0.5
Typ.
170
540
300
Typ.
Typ.
Typ.
255
1.2
2.5
5.6
5.4
5.5
30
18
1
DPAK
2.75
100
Max.
Max.
Max.
Max.
±100
100
1.5
10
5
Unit
A/µs
°C/W
°C/W
°C/W
Unit
Unit
Unit
µJ
ns
ns
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V
V
S
A