BU508AX

Manufacturer Part NumberBU508AX
DescriptionSilicon Diffused Power Transistor
ManufacturerNXP Semiconductors
BU508AX datasheet
 
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Philips Semiconductors
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in
horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
P
Total power dissipation
tot
V
Collector-emitter saturation voltage
CEsat
I
Collector saturation current
Csat
t
Fall time
f
PINNING - SOT399
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
I
Base current (DC)
B
I
Base current peak value
BM
P
Total power dissipation
tot
T
Storage temperature
stg
T
Junction temperature
j
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
Junction to heatsink
th j-hs
R
Junction to heatsink
th j-hs
R
Junction to ambient
th j-a
July 1998
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
I
= 4.5 A; I
= 1.6 A
C
B
f = 16 kHz
I
= 4.5 A; f = 16kHz
Csat
PIN CONFIGURATION
case
1 2 3
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
CONDITIONS
without heatsink compound
with heatsink compound
in free air
1
Product specification
BU508AX
TYP.
MAX.
UNIT
-
1500
V
-
700
V
-
8
A
-
15
A
-
45
W
-
1.0
V
4.5
-
A
0.7
-
s
SYMBOL
c
b
e
MIN.
MAX.
UNIT
-
1500
V
-
700
V
-
8
A
-
15
A
-
4
A
-
6
A
-
45
W
-65
150
˚C
-
150
˚C
TYP.
MAX.
UNIT
-
3.7
K/W
-
2.8
K/W
35
-
K/W
Rev 1.200

BU508AX Summary of contents

  • Page 1

    ... T 25 ˚ 4 1 kHz 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS without heatsink compound with heatsink compound in free air 1 Product specification BU508AX TYP. MAX. UNIT - 1500 V - 700 1 SYMBOL ...

  • Page 2

    ... 100 mA CONDITIONS I = 0.1 A 4.5 A;L 1 mH;C Csat 1 B(end 2. Product specification BU508AX MIN. TYP. MAX. - 2500 - 22 - MIN. TYP. MAX 1 2 700 - - - - 1 1 TYP. MAX 125 - = ...

  • Page 3

    ... VCEOsust . CEOsust ICsat h FE 100 t IBend 0.1 t Fig.6. Typical DC current gain Product specification BU508AX ICsat IBend - IBM Fig.4. Switching times definitions. + 150 v nominal adjust for ICsat 1mH LB D.U.T. 12nF Fig.5. Switching times test circuit . BU508AD ...

  • Page 4

    ... Fig.11. Normalised power dissipation. C BU508AD 4. Product specification BU508AX bu508ax 1.0E-05 1E-03 1.0E-01 1.0E f(t); parameter j-hs p Normalised Power Derating with heatsink compound ...

  • Page 5

    ... VCE / V = 25˚C Fig.13. Forward bias safe operating area Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 the envelope. 5 Product specification BU508AX 0.01 ICM max IC max II Ptot max I 1000 1 10 100 VCE / V 5 newton force on the centre of ...

  • Page 6

    ... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU508AX 5.8 max 3.0 3 0.95 max 3.3 Rev 1.200 ...

  • Page 7

    ... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Product specification BU508AX Rev 1.200 ...