BGB540 Infineon Technologies Corporation, BGB540 Datasheet

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BGB540

Manufacturer Part Number
BGB540
Description
Active Biased Rf Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet

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BGB540
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INFINEON
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BGB540
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D a t a s h e e t , B G B 5 4 0 , S e p t . 2 0 0 2
B G B 5 4 0
A c t i v e B i a s e d R F T r a n s i s t o r
MMIC
W i r e l e s s
S i l i c o n D i s c r e t e s
N e v e r
s t o p
t h i n k i n g .

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BGB540 Summary of contents

Page 1

MMIC ...

Page 2

Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted charac- teristics. Terms ...

Page 3

... BGB540 Data sheet Revision History: Previous Version: Page Subjects (major changes since last revision) 4-9 RF parameters and SPICE model updated Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com ...

Page 4

... ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package BGB540 SOT343 Data sheet C,3 Description ® SIEGET -45 NPN Transistor with integrated biasing for high gain low noise figure applications. I according E,2 Marking MCs 4 can be controlled using I C =10*I Bias . Chip T0559 BGB540 Bias 2002-09-11 ...

Page 5

... V I Bias V 1) < 75° Bias C Bias,4 C,3 Bias B,1 E Fig. 1: Symbol definition 5 Value 4 1 0.7 B 250 tot T 150 j -65 ... +150 A -65 ... +150 STG 300 BGB540 Unit °C °C °C K/W 2002-09-11 ...

Page 6

... A Symbol f=0.9GHz | f=1.8GHz f=0.9GHz IL f=1.8GHz f=0.9GHz F 50 f=1.8GHz P -1dB LOPT Z =50 L OIP L/S L/SOPT Z =50 L BGB540 Out min. typ. max 1. 2002-09-11 Unit dBm dBm pF ...

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... S12 S22 Mag Ang Mag 0.0064 75.4 0.9334 0.0141 76.8 0.8357 0.0241 75.4 0.6670 0.0335 75.3 0.5672 0.0439 74.7 0.5066 0.0547 73.4 0.4675 0.0663 71.5 0.4406 0.0785 69.3 0.4209 0.0901 66.5 0.4013 0.1014 63.5 0.3822 0.1125 60.5 0.3519 0.1655 44.9 0.2868 0.2151 29.1 0.2398 0.2439 9.1 0.1506 0.2362 -7.1 0.1196 BGB540 S22 Ang -11.8 -20.9 -29.7 -31.0 -33.0 -33.8 -35.1 -36.8 -38.7 -41.5 -43.6 -57.0 -76.1 -111.0 168.0 2002-09-11 ...

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... Output Compression Point P = f(I −1dB 1.8GHz BGB540 , 0.3GHz 0.9GHz 1.9GHz 2.4GHz [mA [mA] C 2002-09- ...

Page 9

... ISC = 1.9237e- 5.4 VJE = 0.8051 VTF = 0.23794 VJC = 0.81969 CJS 1. 0.36 Bias 120 134 120 Valid up to 3GHz BGB540 0 6 2002-09-11 ...

Page 10

... +0.2 acc. to DIN 6784 2 +0.1 0.6 10 BGB540 This proposal demonstrates how to use the BGB540 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP540. 0.9 ±0.1 0.1 max A +0.1 0.15 -0.05 ...

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