BGB540 Infineon Technologies Corporation, BGB540 Datasheet - Page 5

• Manufacturer Part Number: BGB540
• Description: Active Biased Rf Transistor
• Manufacturer: Infineon Technologies Corporation

Maximum Ratings
Parameter
Maximum collector-emitter voltage
Maximum collector current
Maximum bias current
Maximum emitter-base voltage
Maximum base current
Total power dissipation, T
Junction temperature
Ambient temperature
Storage temperature
Thermal resistance: junction-soldering point
Notes:
For detailed symbol description refer to figure 1.
1)
Data sheet
T
S
is measured on the emitter lead at the soldering point to the PCB
S
< 75°C
Bias
Fig. 1: Symbol definition
Bias,4
I
1)
Bias
I
B,1
B
V
5
EB
Symbol
R
E,2
T
V
I
V
C,3
P
I
T
Bias
C
th JS
I
I
T
STG
CE
C
EB
B
tot
A
j
V
CE
-65 ... +150
-65 ... +150
Value
250
150
300
4.5
1.2
0.7
80
8
2002-09-11
BGB540
Unit
K/W
mW
mA
mA
mA
°C
°C
°C
V
V