PBSS301PZ NXP Semiconductors, PBSS301PZ Datasheet - Page 3

• Manufacturer Part Number: PBSS301PZ
• Description: Pbss301pz 12 V, 5.7 A Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Limiting values
PBSS301PZ_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
P
T
T
T
C
CM
Fig 1. Power derating curves
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
Rev. 01 — 7 September 2006
P
(W)
2
tot
O
2.5
2.0
1.5
1.0
0.5
3
0
, standard footprint
75
(1)
(2)
(3)
25
2
O
3
Conditions
open emitter
open base
open collector
single pulse;
t
T
, standard footprint.
p
amb
25
1 ms
2
12 V, 5.7 A PNP low V
25 C
75
125
T
006aaa560
amb
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
[1]
[2]
[3]
( C)
175
Min
-
-
-
-
-
-
-
-
-
PBSS301PZ
65
65
CEsat
(BISS) transistor
Max
0.7
1.7
2
150
+150
+150
12
12
5
5.7
11.4
Unit
V
V
V
A
A
W
W
W
2
C
C
C
.
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