FMA80N10T2 Fuji Electric holdings CO.,Ltd, FMA80N10T2 Datasheet - Page 14

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FMA80N10T2

Manufacturer Part Number
FMA80N10T2
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
Fuji Electric Device Technology Co.,Ltd.
0.04
0.03
0.02
0.01
0.00
0.04
0.03
0.02
0.01
0.00
0
-50
10
VGS=4V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
-25
20
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=40A,VGS=10V
30
0
40
4.5V
25
50
max.
typ.
Tch [
s pulse test,Tch=25
ID [A]
60
50
C]
70
75
80
MS5F6117
5V
90 100 110 120
100
6V
125
C
20V
10V
150
14 / 19
H04-004-03
a

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