FMA80N10T2 Fuji Electric holdings CO.,Ltd, FMA80N10T2 Datasheet - Page 7

• Manufacturer Part Number: FMA80N10T2
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

Fuji Electric Device Technology Co.,Ltd.
Failure Criteria
Test
No.
Breakdown Voltage
Zero gate Voltage Drain-Source Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source on-state Resistance
Forward Transconductance
Diode forward on-Voltage
Marking
Soldering
and other damages
* LSL : Lower Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
10 HTRB
1 High Temp.
2 Low Temp.
3 Temperature
4 Temperature
5 Unsaturated
6 Temperature
7 Thermal Shock Fluid : pure water(running water)
8 Intermittent
9 HTRB
have conducted after drying the package surface for more than an hour at 150°C.
Test
Items
Storage
Storage
Humidity
Storage
Humidity
BIAS
Pressurized
Vapor
Cycle
Operating
Life
(Gate-source)
(Drain-Source)
Item
Testing methods and Conditions
Temperature : 150+0/-5°C
Test duration : 1000hr
Temperature : -55+5/-0°C
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : V
Test duration : 1000hr
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48hr
High temp.side : 150  5  C/30min.
Low temp.side : -55  5  C/30min.
RT : 5°C ∼ 35°C/5min.
Number of cycles : 100cycles
High temp.side : 100+0/-5  C
Low temp.side : 0+5/-0  C
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
 Tc=90degree
Tch Tch(max.)
Test duration : 3000 cycle
Temperature : Tch=150+0/-5°C
Bias Voltage : +V
Test duration : 1000hr
Temperature : Tch=150+0/-5°C
Bias Voltage : V
Test duration : 1000hr
DS
DS
GS
(max) * 0.8
(max)*1.0
(max)
Symbols
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
VSD
* USL : Upper Specification Limit
-----
With eyes or Microscope
Lower Limit
MS5F6117
Reference
Standard
EIAJ
ED4701/200
method 201
EIAJ
ED4701/200
method 202
EIAJ
ED4701/100
method 103
EIAJ
ED4701/100
method 103
EIAJ
ED4701/100
method 103
EIAJ
ED4701/100
method 105
EIAJ
ED4701/300
method 307
EIAJ
ED4701/100
method 106
EIAJ
ED4701/100
method 101
EIAJ
ED4701/100
method 101
LSL * 1.0
LSL * 0.8
LSL * 0.8
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Failure Criteria
Upper Limit
Sampling
number
USL * 1.2
USL * 1.2
USL * 1.2
USL * 2
USL * 2
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22
22
22
22
22
22
22
22
22
22
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Acceptance
number
Unit
-----
(0:1)
(0:1)

V
A
A
V
S
V
H04-004-03
a