FMA80N10T2 Fuji Electric holdings CO.,Ltd, FMA80N10T2 Datasheet - Page 3

• Manufacturer Part Number: FMA80N10T2
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

1.Scope
2.Construction
3.Applications
4.Outview
5.Absolute Maximum Ratings at Tc=25  C (unless otherwise specified)
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-Repetitive
Maximum Avalanche current
Repetitive
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
6.Electrical Characteristics at Tc=25  C (unless otherwise specified)
Static Ratings
Drain-Source
Gate Threshold
Zero Gate Voltage
Gate-Source
Drain-Source
Fuji Electric Device Technology Co.,Ltd.
On-State Resistance R
Breakdown Voltage BV
Description
Leakage Current I
Drain Current I
Description
Voltage V
This specifies Fuji Power MOSFET FMA80N10T2
N-Channel enhancement mode power MOSFET
for Switching
TO-220F
DSS
GSS
Symbol
GS
DS
DSS
(th)
(on)
V
V
I
I
V
I
I
E
E
dV
dV/dt
P
T
T
V
I
V
I
V
V
V
V
V
V
V
I
V
D
DP
AS
AR
D
D
D
Outview See to 8/19 page
ch
stg
DS
DSX
GS
AS
AR
D
ISO
GS
DS
DS
GS
DS
GS
GS
DS
GS
=250  A
=250  A
=40A
Symbol
DS
=V
=100V
=80V
=0V
=0V
=0V
=0V
= +30V / -20V
=10V
/dt
Conditions
GS
T
T
ch
ch
Characteristics
=25  C
=125  C
-55 to +150
+30/-20
2.16
100
728
150
9.7
97
60
80
80
40
20
± 320
5
2
min.
MS5F6117
100
2.0
-
-
-
-
kVrms
kV/  s
kV/  s
10.0
Unit
typ.
mJ
mJ
 C
 C
W
V
V
A
A
V
A
A
-
-
-
-
-
VGS=-20V
Note *1
Note *1
Note *2
Note *3
VDS  100V
Note *4
Tc=25°C
Ta=25°C
t=60sec
f=60Hz
max.
12.8
250
100
4.0
25
-
Remarks
3 / 19
H04-004-03
Unit
m 
 A
 A
nA
V
V
a