NUS3116MT ON Semiconductor, NUS3116MT Datasheet - Page 2

• Manufacturer Part Number: NUS3116MT
• Description: Main Switch Power Mosfet -12 V, -6.2 A, ?cool Single P-channel With Dual Pnp Transistor Low Vce Sat Transistors, 3x3 Mm Wdfn Package
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size of 0.5 in sq, 1 oz. Cu.
THERMAL RESISTANCE RATINGS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
P-Channel Power MOSFET Maximum Ratings
P-Channel MOSFET Electrical Characteristics
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Continuous Drain Current (Note 2, Minimum Pad)
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t < 10 s (Note 2)
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t < 10 s (Note 1)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown
Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Parameter
2
Parameter
Parameter
V
V
V
(BR)DSS
Symbol
V
GS(TH)
R
(BR)DSS
I
I
GS(TH)
DS(on)
DSS
GSS
g
FS
/T
(T
(T
/T
http://onsemi.com
J
J
J
J
= 25°C unless otherwise stated)
= 25°C unless otherwise specified)
NUS3116MT
Steady State
Steady State
Steady State
V
V
DS
I
GS
V
V
V
V
D
V
t ≤ 5 s
t ≤ 5 s
V
GS
GS
GS
GS
DS
2
= -12 V
= -250 mA, ref to 25°C
DS
= 0 V,
Test Condition
= V
= -4.5 V, I
= -2.5 V, I
= 0 V, I
= -16 V, I
= 0 V, V
t
p
DS
= 10 ms
, I
D
D
GS
= -250 mA
D
= -250 mA
D
D
T
T
T
T
T
T
T
T
T
J
= -3.0 A
= ±8 V
= -3.0 A
= -3.0 A
A
A
A
A
A
A
A
J
= 125°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
-12.0
-0.45
Min
T
Symbol
Symbol
J
V
R
R
R
R
V
, T
I
P
P
T
DSS
DM
I
I
I
qJA
qJA
qJA
qJA
GS
D
D
S
D
D
L
STG
-10.1
-0.67
Typ
2.68
5.9
32
44
-55 to 150
Value
-5.47
Max
±8.0
-4.0
-6.2
-4.4
-3.2
1.14
-2.8
-12
-25
260
110
1.7
2.2
56
72
40
±200
Max
-1.0
-10
-1.1
40
50
mV/°C
mV/°C
Units
Units
Units
°C/W
°C/W
°C/W
°C/W
mA
nA
mW
°C
°C
W
W
V
V
V
A
A
A
A
V
S