NUS3116MT ON Semiconductor, NUS3116MT Datasheet - Page 4

• Manufacturer Part Number: NUS3116MT
• Description: Main Switch Power Mosfet -12 V, -6.2 A, ?cool Single P-channel With Dual Pnp Transistor Low Vce Sat Transistors, 3x3 Mm Wdfn Package
• Manufacturer: ON Semiconductor

7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
OFF CHARACTERISTICS
ON CHARACTERISTICS
Dual-PNP Transistors Electrical Characteristics
Input Capacitance
Output Capacitance
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Cutoff Current
DC Current Gain (Note 7)
DC Current Gain (Note 7)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
from WALL
from USB
Voltage
Supply
V
DD
Parameter
R_sns
Symbol
V
V
V
V
V
V
CE(sat)
CE(sat)
CE(sat)
C
I
C
h
h
CES
CEO
CBO
EBO
obo
FE
FE
ibo
Figure 2. Typical Application Circuit
1
2
3
4
http://onsemi.com
(T
NUS3116MT
J
= 25°C unless otherwise stated)
V
V
I
I
C
C
I
C
I
I
EB
CB
C
C
I
I
= -1.0 A, V
= -2.0 A, V
I
= -1.0 A, I
C
E
C
= -1.0 A, I
= -2.0 A, I
= -0.5 V, f = 1.0 MHz
= -3.0 V, f = 1.0 MHz
Test Condition
4
= -0.1 mA, I
= -0.1 mA, I
= -10 mA, I
V
D
CES
= -30 V
B
CE
CE
B
B
= -0.01 A
= -0.1 A
= -0.2 A
= -2.0 V
= -2.0 V
B
C
E
= 0
= 0
= 0
C
-8.0
Min
-30
-30
100
100
8
7
6
5
CHR_ctl
USB_ctl
BAT_FET_N
Typ
200
200
240
50
Main Battery
Max
-0.1
0.22
0.12
0.24
400
100
Units
mA
pF
pF
V
V
V
V
V
V
-
-