NUS3116MT ON Semiconductor, NUS3116MT Datasheet - Page 8

• Manufacturer Part Number: NUS3116MT
• Description: Main Switch Power Mosfet -12 V, -6.2 A, ?cool Single P-channel With Dual Pnp Transistor Low Vce Sat Transistors, 3x3 Mm Wdfn Package
• Manufacturer: ON Semiconductor

725
675
625
575
525
475
425
375
325
275
225
175
125
75
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0
Figure 15. Collector Emitter Saturation Voltage
0.001
0.001
Figure 19. Base Emitter Turn-On Voltage vs.
150°C (2.0 V)
-55 °C (2.0 V)
Figure 17. DC Current Gain vs. Collector
25°C (2.0 V)
V
T
J
CE
= 25°C
= -1.0 V
0.01
I
I
C
C
0.01
I
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
C
, COLLECTOR CURRENT (A)
vs. Collector Current
Collector Current
150°C
-55 °C
25°C
Current
0.1
0.1
0.1
TYPICAL CHARACTERISTICS - BJT
IC/IB = 100
1
1
1
IC/IB = 10
http://onsemi.com
NUS3116MT
10
10
10
8
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.001
Figure 16. Collector Emitter Saturation Voltage
Figure 18. Base Emitter Saturation Voltage vs.
IC/IB = 100
10 mA
IC/IB = 100
Figure 20. Saturation Region
I
0.01
I
0.01
0.1
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
I
vs. Collector Current
B
100 mA
, BASE CURRENT (mA)
Collector Current
300 mA
0.1
0.1
1
-55 °C
25°C
150°C
150°C
-55 °C
500 mA
10
1
1
25°C
100
10
10