NUS3116MT ON Semiconductor, NUS3116MT Datasheet - Page 5

• Manufacturer Part Number: NUS3116MT
• Description: Main Switch Power Mosfet -12 V, -6.2 A, ?cool Single P-channel With Dual Pnp Transistor Low Vce Sat Transistors, 3x3 Mm Wdfn Package
• Manufacturer: ON Semiconductor

0.05
0.04
0.03
0.02
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
-50
0
1
Figure 5. On-Resistance vs. Drain Current
V
I
V
GS
D
Figure 7. On-Resistance Variation with
-25
GS
Figure 3. On-Region Characteristics
-V
= -3 A
= 4.5 V
1
DS
= -4.5 V
T
2
J
-1.7 - -8.0 V
, DRAIN-TO-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
-I
D
2
, DRAIN CURRENT (A)
Temperature
25
3
T
T
T
J
J
J
3
50
= 100°C
= -55°C
= 25°C
TYPICAL CHARACTERISTICS - MOSFET
4
75
4
100
T
V
J
GS
= 25°C
5
5
= -1.4 V
-1.6 V
-1.5 V
http://onsemi.com
125
NUS3116MT
6
6
150
5
10,000
1,000
0.05
0.04
0.03
0.02
100
6
5
4
3
2
1
0
0.5
2
1
Figure 6. On-Resistance vs. Drain Current and
Figure 8. Drain-to-Source Leakage Current
V
T
DS
J
V
= 25°C
GS
-V
-V
≥ -10 V
Figure 4. Transfer Characteristics
DS
GS
= 0 V
2
4
, DRAIN-TO-SOURCE VOLTAGE (V)
, GATE-T O-SOURCE VOLTAGE (V)
-I
D
1.0
, DRAIN CURRENT (A)
T
Gate Voltage
J
vs. Voltage
6
3
= 100°C
T
V
V
J
GS
GS
= 25°C
T
T
= -2.5 V
J
= -4.5 V
J
= 150°C
= 100°C
4
8
T
1.5
J
= -55°C
10
5
2.0
12
6