NUS3116MT ON Semiconductor, NUS3116MT Datasheet - Page 6

• Manufacturer Part Number: NUS3116MT
• Description: Main Switch Power Mosfet -12 V, -6.2 A, ?cool Single P-channel With Dual Pnp Transistor Low Vce Sat Transistors, 3x3 Mm Wdfn Package
• Manufacturer: ON Semiconductor

1,000
2800
2400
2000
1600
1200
800
400
100
10
0
1
GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
-4
1
C
C
Figure 11. Resistive Switching Time Variation
V
I
V
iss
rss
V
D
DD
GS
DS
= -3.0 A
-2
-V
= -12 V
= -4.5 V
= 0 V
Figure 9. Capacitance Variation
GS
0
R
-V
V
G
C
vs. Gate Resistance
, GATE RESISTANCE (W)
GS
oss
DS
= 0 V
2
0.01
100
10
0.1
4
10
1
t
t
d(off)
d(on)
0.1
t
t
f
r
TYPICAL CHARACTERISTICS - MOSFET
Single Pulse
Figure 13. Maximum Rated Forward Biased
T
6
C
= 25°C
-V
DS
8
, DRAIN-TO-SOURCE VOLTAGE (V)
C
T
iss
R
Thermal Limit
Package Limit
J
DS(on)
Safe Operating Area
= 25°C
10
http://onsemi.com
1
NUS3116MT
Limit
100
12
6
5
4
3
2
1
0
6
0.01
0
0.1
10
V
Q
1
10
DS
Drain-to-Source Voltage vs. Total Charge
gs
0
Figure 12. Diode Forward Voltage vs. Current
1 ms
10 ms
100 ms
2
dc
V
GS
Figure 10. Gate-to-Source and
-V
Q
= 0 V
Q
g
SD
0.2
, TOTAL GATE CHARGE (nC)
gd
4
, SOURCE-TO-DRAIN VOLTAGE (V)
T
J
= 150°C
100
6
Mounted on 2″ sq.
FR4 board (0.5″ sq.
2 oz. Cu single
sided) with MOSFET
die operating.
0.4
Q
T
8
0.6
10
V
GS
I
T
T
D
J
J
T
= -3 A
= 25°C
= 25°C
J
12
0.8
= -55°C
14
12
10
8
6
4
2
0
1.0