BUJ105A NXP Semiconductors, BUJ105A Datasheet

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BUJ105A

Manufacturer Part Number
BUJ105A
Description
Silicon Diffused Power Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
PINNING - TO220AB
LIMITING VALUES8
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
February 1999
Silicon Diffused Power Transistor
SYMBOL
V
V
V
I
I
P
V
h
t
SYMBOL
V
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
CM
f
C
CM
B
BM
PIN
FEsat
stg
j
CESM
CBO
CEO
tot
CEsat
tab
CESM
CEO
CBO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
tab
CONDITIONS
V
T
I
I
I
CONDITIONS
V
T
CONDITIONS
in free air
C
C
C
1 2 3
mb
mb
1
BE
BE
= 4.0 A;I
= 4.0 A; V
= 5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B1
B
= 1 A
= 0.8 A
CE
= 5 V
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
-65
0.3
11
20
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
e
c
1.56
700
700
400
700
400
700
150
150
BUJ105A
1.0
16
80
15
50
16
80
8
8
4
8
-
Rev 1.000
UNIT
UNIT
UNIT
K/W
K/W
ns
˚C
˚C
W
W
V
V
V
A
A
V
V
V
V
A
A
A
A

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BUJ105A Summary of contents

Page 1

... ˚ 4.0 A PIN CONFIGURATION tab CONDITIONS ˚C mb CONDITIONS in free air 1 Product specification BUJ105A TYP. MAX. UNIT - 700 V - 700 V - 400 0.3 1 SYMBOL MIN ...

Page 2

... CONDITIONS Con Bon Boff ohms BB2 Con Bon - Con Bon - 100 ˚ Product specification BUJ105A MIN. TYP. MAX 400 - - - 0.3 1.0 - 1.0 1 TYP ...

Page 3

... VCEOsust . CEOsust = 300 V; -V VCC VCC T.U. Fig. 6. Switching times waveforms with inductive load 0.01. p requirements. Bon 3 Product specification BUJ105A ICon ton toff IBon 30ns -IBoff VCC LC LB T.U.T. Fig. 5. Test circuit inductive load 200 uH ...

Page 4

... Fig.11. Base-Emitter saturation voltage Solid lines = typ values, V VCESAT/V 0.6 0.5 0.4 0.3 0.2 0 0.2 = f(I ) Fig.12. Collector-Emitter saturation voltage Solid lines = typ values Product specification BUJ105A VCEsat/V IC= 0.01 0.10 1.00 IB/A = f(IB); T CEsat -40C Tj=100C 25C 0 IC/A = f(IC); at IC/IB =4. BEsat Tj=100C 25C 0.4 0 IC/A = f(IC); at IC/IB =4. CEsat 10.00 =25˚ ...

Page 5

... 1E+00 0 Fig.15. Reverse bias safe operating area ( VCC LC VCL T.U.T. = 5V,3V & 1V Product specification 0 100 200 300 400 500 600 VCEclamp/V for -V = 5V,3V & 1V. BE BUJ105A -5V -3V -1V 700 800 < jmax Rev 1.000 ...

Page 6

... Dimensions in mm Net Mass 3,0 max not tinned Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.16. TO220AB; pin 2 connected to mounting base. 6 Product specification BUJ105A 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.000 15,8 max ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 7 Product specification BUJ105A Rev 1.000 ...

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