BUJ105A NXP Semiconductors, BUJ105A Datasheet - Page 3

• Manufacturer Part Number: BUJ105A
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
February 1999
Silicon Diffused Power Transistor
R
Fig .3. Test circuit resistive load. V
B
and R
30-60 Hz
VIM
250
0
IC / mA
100
10
0
V
Fig.2. Oscilloscope display for V
CC
L
T
= 250 V; t
calculated from I
Fig.1. Test circuit for V
tp
6V
p
300R
= 20 s; = t
R
VCE / V
B
Con
and I
p
R
VCC
CEOsust
Bon
Oscilloscope
T.U.T.
/ T = 0.01.
L
VCEOsust
1R
IM
100-200R
Horizontal
Vertical
min
requirements.
= -6 to +8 V
CEOsust
.
+ 50v
.
3
Fig. 6. Switching times waveforms with inductive load.
Fig. 4. Switching times waveforms with resistive load.
VCC
IB
IB
IC
-VBB
IC
IBon
= 300 V; -V
Fig. 5. Test circuit inductive load.
10 %
tr
ton
BE
30ns
90 %
= 5 V; L
LB
ts
-IBoff
toff
IBon
C
= 200 uH; L
LC
Product specification
toff
ts
tf
90 %
ICon
VCC
-IBoff
IBon
10 %
ICon
BUJ105A
tf
B
T.U.T.
= 1 uH
Rev 1.000
90 %
10 %
t
t