MCTA75P60E1 Intersil Corporation, MCTA75P60E1 Datasheet

MCTA75P60E1

Manufacturer Part Number

MCTA75P60E1

Description

75a, 600v P-type Mos Controlled Thyristor Mct

Manufacturer

Intersil Corporation

Datasheet

1.MCTA75P60E1.pdf (5 pages)

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April 1999

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Features

• 75A, -600V

• V

• 2000A Surge Current Capability

• 2000A/ s di/dt Capability

• MOS Insulated Gate Control

• 120A Gate Turn-Off Capability at +150

Description

The MCT is an MOS Controlled Thyristor designed for switching

currents on and off by negative and positive pulsed control of an

insulated MOS gate. It is designed for use in motor controls,

inverters, line switches and other power switching applications.

The MCT is especially suited for resonant (zero voltage or

zero current switching) applications. The SCR like forward

drop greatly reduces conduction power loss.

MCTs allow the control of high power circuits with very small

amounts of input energy. They feature the high peak current

capability common to SCR type thyristors, and operate at

junction temperatures up to +150

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings

Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Cathode Current (See Figure 2)

Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt

Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NOTE:

MCTV75P60E1

MCTA75P60E1

1. Maximum Pulse Width of 250 s (Half Sine) Assume T

(0.063" (1.6mm) from case for 10s)

PART NUMBER

= +25

= +90

= -1.3V(Maximum) at I = 75A and +150

Harris Corporation 1999

Semiconductor

C (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

PART NUMBER INFORMATION

TO-247

MO-093AA

PACKAGE

C with active switching.

= +25

MV75P60E1

MA75P60E1

C, Unless Otherwise Speciﬁed

BRAND

(Initial) = +90

2-18

P-Type MOS Controlled Thyristor (MCT)

Package

Symbol

C and T

MCTV75P60E1,

(Final) = T

MCTA75P60E1

JEDEC MO-093AA (5-LEAD TO-218)

JEDEC STYLE TO-247 5-LEAD

K25

K90

KSM

DRM

RRM

GAM

, T

STG

(Max) = +150

MCTA75P60E1

MCTV75P60E1

-55 to +150

ANODE

See Figure 11

ANODE

2000

-600

1.67

120

208

260

ANODE

File Number

CATHODE

GATE

GATE RETURN

75A, 600V

UNITS

A/ s

3374.6

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MCTA75P60E1 Summary of contents

Page 1

... MCTA75P60E1 75A, 600V JEDEC STYLE TO-247 5-LEAD ANODE ANODE CATHODE GATE RETURN GATE JEDEC MO-093AA (5-LEAD TO-218) ANODE ANODE CATHODE GATE RETURN GATE MCTV75P60E1 MCTA75P60E1 -600 DRM +5 RRM I 85 K25 I 75 K90 2000 KSM 120 GAM See Figure 11 ...

Page 2

... Speciﬁcations MCTV75P60E1, MCTA75P60E1 Electrical Speciﬁcations T = +25 C PARAMETER SYMBOL Peak Off-State I DRM Blocking Current Peak Reverse I RRM Blocking Current On-State Voltage V Gate-Anode I GAS Leakage Current Input Capacitance C Current Turn-On t D(ON)I Delay Time Current Rise Time t Current Turn-Off t D(OFF)I Delay Time Current Fall Time ...

Page 3

... FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT (TYPICAL +150 J 5 -300V -200V KA 1.0 0 CATHODE CURRENT (A) K FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) MCTV75P60E1, MCTA75P60E1 (Continued 200 H G 2.0 1.8 1.6 1.4 1.2 1.0 0.8 = -200V KA 0.6 0.4 0.2 0 100 110 120 FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) ...

Page 4

... D(OFF)I 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of its maximum value. Device delay can establish an additional frequency limiting condi- MCTV75P60E1, MCTA75P60E1 (Continued) 150 140 ...

Page 5

... LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. MCTV75P60E1, MCTA75P60E1 - 500 + - 20V + IS 200ns ...

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