IS61C64AL Integrated Silicon Solution, Inc., IS61C64AL Datasheet

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IS61C64AL

Manufacturer Part Number
IS61C64AL
Description
8k X 8 High-speed Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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IS61C64AL-10JLI
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IS61C64AL-10JLI
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IS61C64AL
FEATURES
• High-speed access time: 10 ns
• CMOS low power operation
• TTL compatible interface levels
• Single 5V power supply
• Fully static operation: no clock or refresh
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
10/23/06
8K x 8 HIGH-SPEED CMOS STATIC RAM
— 1 mW (typical) CMOS standby
— 125 mW (typical) operating
required
I/O0-I/O7
A0-A12
VDD
GND
CE
OE
WE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
DESCRIPTION
The
8192-word by 8-bit static RAM. It is fabricated using
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields access times as fast as 10 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using one Chip
Enable input, CE. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C64AL is packaged in the JEDEC standard 28-
pin, 300-mil SOJ, and TSOP.
ISSI
IS61C64AL is a very high-speed, low power,
MEMORY ARRAY
COLUMN I/O
8K x 8
OCTOBER 2006
ISSI
®
's
1

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IS61C64AL Summary of contents

Page 1

... CMOS input levels. Easy memory expansion is provided by using one Chip Enable input, CE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C64AL is packaged in the JEDEC standard 28- pin, 300-mil SOJ, and TSOP. DECODER I/O ...

Page 2

... IS61C64AL TRUTH TABLE Mode Not Selected X H (Power-down) Output Disabled H L Read H L Write L L PIN CONFIGURATION 28-Pin SOJ VDD WE A12 A11 A10 CE A1 ...

Page 3

... IS61C64AL ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Storage Temperature STG P Power Dissipation Output Current (LOW) OUT Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 4

... IS61C64AL POWER SUPPLY CHARACTERISTICS Symbol Parameter I V Operating Supply Current I V Dynamic Operating Supply Current I TTL Standby Current 1 SB (TTL Inputs) I CMOS Standby 2 SB Current (CMOS Inputs) Note address and data inputs are cycling at the maximum frequency means no input lines change. ...

Page 5

... IS61C64AL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACS OE Access Time t DOE OE to Low-Z Output t (2) LZOE OE to High-Z Output t (2) HZOE CE to Low-Z Output t (2) LZCS CE to High-Z Output ...

Page 6

... IS61C64AL AC WAVEFORMS (1,2) READ CYCLE NO. 1 ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS LZCS HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE Address is valid prior to or coincident with CE LOW transitions OHA ...

Page 7

... IS61C64AL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCS t Address Setup Time AW to Write End t Address Hold HA from Write End t Address Setup Time SA WE Pulse Width (OE LOW PWE WE Pulse Width (OE HIGH PWE t Data Setup to Write End ...

Page 8

... IS61C64AL WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) ADDRESS OE CE LOW DATA UNDEFINED OUT D IN WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) ADDRESS OE LOW CE LOW DATA UNDEFINED OUT D IN Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write ...

Page 9

... IS61C64AL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note: 1. Typical Values are measured 5V DATA RETENTION WAVEFORM (CE VDD 4.5V 2. GND Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...

Page 10

... IS61C64AL ORDERING INFORMATION Industrial Range: -40°C to +85°C Speed (ns) Order Part No. 10 IS61C64AL-10JI IS61C64AL-10JLI IS61C64AL-10TI IS61C64AL-10TLI 10 Package 300-mil Plastic SOJ 300-mil Plastic SOJ, Lead-free Plastic TSOP Plastic TSOP, Lead-free Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI ® Rev. B 10/23/06 ...

Page 11

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 12

... B — 0.010 C — 0.730 D 20.83 — 0.345 E — 0.305 E1 — 0.287 E2 e Integrated Silicon Solution, Inc. — www.issi.com — ISSI MILLIMETERS INCHES Min. Typ. Max. 32 — — 3.56 — — 0.140 0.64 — — 0.025 — 2.41 — 2.67 0.095 — 0.105 0.41 — ...

Page 13

... C 0.10 0.20 D 7.90 8.10 E 11.70 11.90 H 13.20 13.60 e 0.55 BSC L 0.30 0. Integrated Silicon Solution, Inc. PK13197T28 Rev. B 01/31/ SEATING PLANE Inches Min Max Notes Controlling dimension: millimeters, unless otherwise specified. 0.037 0.047 2. BSC = Basic lead spacing between centers. 0.002 0.008 3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package 0 ...

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