IS61C3216AL Integrated Silicon Solution, Inc., IS61C3216AL Datasheet

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IS61C3216AL

Manufacturer Part Number
IS61C3216AL
Description
32k X 16 High-speed Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61C3216AL-12TLI
Manufacturer:
ISSI
Quantity:
1 000
IS61C3216AL
32K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 12 ns
• Low Active Power: 175 mW (typical)
• Low Standby Power: 1 mW (typical)
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
• Available in 44-pin SOJ package and
• Commercial and Industrial temperature ranges
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. A
09/26/05
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
CMOS standby
required
44-pin TSOP (Type II)
available
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A14
VDD
GND
OE
WE
CE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
1-800-379-4774
I/O
DESCRIPTION
The
organized as 32,768 words by 16 bits. They are fabricated
using
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C3216AL is packaged in the JEDEC standard 44-
pin 400-mil SOJ and 44-pin TSOP (Type II).
ISSI
ISSI
IS61C3216AL is high-speed, 512Kb static RAMs
's high-performance CMOS technology. This highly
MEMORY ARRAY
COLUMN I/O
32K x 16
SEPTEMBER 2005
ISSI
®
1

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IS61C3216AL Summary of contents

Page 1

... Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C3216AL is packaged in the JEDEC standard 44- pin 400-mil SOJ and 44-pin TSOP (Type II). A0-A14 DECODER ...

Page 2

... IS61C3216AL PIN CONFIGURATIONS 44-Pin SOJ A14 A13 A12 A11 I/ I/O15 I/ I/O14 I/ I/O13 I/ I/O12 VDD 11 34 GND GND 12 33 VDD I/ I/O11 I/ I/O10 I/ I/ A10 ...

Page 3

... This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera- tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. OPERATING RANGE (IS61C3216AL) Range Ambient Temperature Commercial 0° ...

Page 4

... IS61C3216AL (1,2) CAPACITANCE Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions 25° MHz ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage ...

Page 5

... IS61C3216AL IS61C3216AL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Operating Supply Current Dynamic Operating Supply Current I I TTL Standby Current (TTL Inputs CMOS Standby Current (CMOS Inputs Note address and data inputs are cycling at the maximum frequency means no input lines change ...

Page 6

... IS61C3216AL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CE to High-Z Output t (2 HZCE CE to Low-Z Output ...

Page 7

... IS61C3216AL AC WAVEFORMS (Address Controlled) ( READ CYCLE NO. 1 (1,2) ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS LZCE LB LZB HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB Address is valid prior to or coincident with CE LOW transition. ...

Page 8

... IS61C3216AL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time AW to Write End t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width (OE =High PWE WE Pulse Width (OE=Low) ...

Page 9

... IS61C3216AL AC WAVEFORMS Controlled) WRITE CYCLE NO. 1 (WE ADDRESS UB DATA UNDEFINED OUT D IN Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state. ...

Page 10

... IS61C3216AL WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) ADDRESS OE CE LOW UB DATA UNDEFINED OUT D IN WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) ADDRESS OE LOW CE LOW UB DATA UNDEFINED OUT D IN Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write ...

Page 11

... IS61C3216AL WRITE CYCLE NO. 4 (UB/LB Back to Back Write) ADDRESS OE CE LOW WE UB OUT DATA UNDEFINED D IN Integrated Silicon Solution, Inc. — www.issi.com — Rev. A 09/26/ ADDRESS 1 ADDRESS PBW WORD 1 HZWE HIGH DATA IN VALID 1-800-379-4774 ISSI ...

Page 12

... IS61C3216AL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note: 1. Typical Values are measured 5V DATA RETENTION WAVEFORM (CE VDD 4.5V 2. GND 12 Test Condition See Data Retention Waveform = 2 ...

Page 13

... IS61C3216AL ORDERING INFORMATION: IS61C3216AL Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 12 IS61C3216AL-12K IS61C3216AL-12T Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 12 IS61C3216AL-12KI IS61C3216AL-12KLI IS61C3216AL-12TI IS61C3216AL-12TLI Integrated Silicon Solution, Inc. — www.issi.com — Rev. A 09/26/05 Package 400-mil Plastic SOJ ...

Page 14

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 15

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products ...

Page 16

... Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

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