IS61C6416AL Integrated Silicon Solution, Inc., IS61C6416AL Datasheet

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IS61C6416AL

Manufacturer Part Number
IS61C6416AL
Description
64k X 16 High-speed Cmos Static Ram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet

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IS61C6416AL
IS62C6416AL
64K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
IS61C6416AL and IS64C6416AL
IS62C6416AL and IS65C6416AL
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
• Available in 44-pin SOJ package and
• Commercial, Industrial and Automotive tempera-
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
06/08/05
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
required
44-pin TSOP (Type II)
ture ranges available
• High-speed access time: 12 ns, 15ns
• Low Active Power: 175 mW (typical)
• Low Standby Power: 1 mW (typical)
• High-speed access time: 35 ns, 45ns
• Low Active Power: 50 mW (typical)
• Low Standby Power: 100 µW (typical)
CMOS standby
CMOS standby
Lower Byte
Upper Byte
I/O8-I/O15
IS64C6416AL
IS65C6416AL
I/O0-I/O7
A0-A15
VDD
GND
OE
WE
CE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
IS65C6416AL are high-speed, 1,048,576-bit static RAMs
organized as 65,536 words by 16 bits. They are fabricated
using
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
ISSI
ISSI
IS61C6416AL, IS62C6416AL, IS64C6416AL and
MEMORY ARRAY
's high-performance CMOS technology. This highly
COLUMN I/O
64K x 16
ISSI
JUNE 2005
®
1

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IS61C6416AL Summary of contents

Page 1

... Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II). A0-A15 ...

Page 2

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL PIN CONFIGURATIONS 44-Pin SOJ A15 A14 A13 A12 A11 I/ I/O15 I/ I/O14 I/ I/O13 I/ I/O12 VDD 11 34 GND GND 12 33 VDD I/ I/O11 I/ I/O10 I/ I/O9 I/ ...

Page 3

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL TRUTH TABLE Mode Not Selected X Output Disabled H X Read Write ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Storage Temperature STG P Power Dissipation Output Current (LOW) OUT Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...

Page 4

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL (1,2) CAPACITANCE Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions 25° MHz ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage ...

Page 5

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL IS61C6416AL/IS64C6416AL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Operating Supply Current Dynamic Operating Supply Current I I TTL Standby Current (TTL Inputs CMOS Standby Current (CMOS Inputs) ...

Page 6

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CE to High-Z Output ...

Page 7

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL AC WAVEFORMS (Address Controlled) ( READ CYCLE NO. 1 (1,2) ADDRESS D OUT PREVIOUS DATA VALID (1,3) READ CYCLE NO. 2 ADDRESS LZCE LB LZB HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB Address is valid prior to or coincident with CE LOW transition. ...

Page 8

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time AW to Write End t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width (OE =High PWE ...

Page 9

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL AC WAVEFORMS Controlled) WRITE CYCLE NO. 1 (WE ADDRESS UB DATA UNDEFINED OUT D IN Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state. ...

Page 10

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) ADDRESS OE CE LOW UB DATA UNDEFINED OUT D IN WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) ADDRESS OE LOW CE LOW UB DATA UNDEFINED OUT D IN Notes: 1 ...

Page 11

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL WRITE CYCLE NO. 4 (UB/LB Back to Back Write) ADDRESS OE CE LOW WE UB OUT DATA UNDEFINED D IN Integrated Silicon Solution, Inc. — www.issi.com — Rev. B 06/08/ ADDRESS 1 ADDRESS PBW WORD 1 HZWE HIGH DATA ...

Page 12

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR Note: 1. Typical Values are measured 5V DATA RETENTION WAVEFORM (CE VDD 4.5V 2. GND 12 Test Condition See Data Retention Waveform = 2 ...

Page 13

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL ORDERING INFORMATION: IS61C6416AL Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 12 IS61C6416AL-12K IS61C6416AL-12T Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 12 IS61C6416AL-12KI IS61C6416AL-12KLI IS61C6416AL-12TI IS61C6416AL-12TLI ORDERING INFORMATION: IS64C6416AL Automotive Range: –40°C to +125°C Speed (ns) Order Part No ...

Page 14

... IS61C6416AL IS64C6416AL IS62C6416AL IS65C6416AL ORDERING INFORMATION: IS62C6416AL Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 35 IS62C6416AL-35K 35 IS62C6416AL-35T Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 35 IS62C6416AL-35KI 35 IS62C6416AL-35TI ORDERING INFORMATION: IS65C6416AL Automotive Range: -40°C to +125°C Speed (ns) Order Part No. ...

Page 15

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 16

... BSC Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products ...

Page 17

... Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

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