STP30NE06LFP STMicroelectronics, STP30NE06LFP Datasheet - Page 2

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STP30NE06LFP

Manufacturer Part Number
STP30NE06LFP
Description
N-CHANNEL Power MOSFET
Manufacturer
STMicroelectronics
Datasheet

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STP30NE06L/FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/9
V
Symbo l
Symbo l
Symbo l
Symbo l
R
R
R
R
V
g
(BR)DSS
I
thj -case
thc-sink
C
thj -amb
I
I
E
DS(on)
C
C
GS(th)
D(o n)
f s
I
GSS
DSS
T
AR
os s
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max)
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= 10 V
= Max Rating
= Max Rating
=
= 5 V
= 10 V I
> I
> I
case
DD
D(o n)
D(o n)
GS
= 50 V)
20 V
= 25
Test Con ditions
Test Con ditions
Test Con ditions
x R
x R
I
D
I
f = 1 MHz
D
D
V
o
= 250 A
DS(on )ma x
DS(on )ma x
C unless otherwise specified)
= 15 A
GS
= 15 A
= 0
Max
Max
Typ
T
V
I
c
GS
D
= 125
=15 A
= 0
TO-220
o
1.875
C
Min.
Min.
Min.
60
30
10
1
62.5
300
Max Value
0.5
0.045
0.035
1350
Typ.
Typ.
Typ.
1.75
100
195
20
18
58
TO-220FP
5
Max.
Max.
Max.
0.06
0.05
2.5
10
100
1
o
o
o
Unit
Unit
Unit
Unit
C/W
C/W
C/W
mJ
nA
pF
pF
pF
o
V
V
A
S
A
C
A
A

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