STP30NE06LFP STMicroelectronics, STP30NE06LFP Datasheet - Page 3

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STP30NE06LFP

Manufacturer Part Number
STP30NE06LFP
Description
N-CHANNEL Power MOSFET
Manufacturer
STMicroelectronics
Datasheet

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Symbo l
Symbo l
Symbo l
I
V
t
SDM
t
t
r (Voff)
SD
I
Q
Q
d(of f)
d(on)
RRM
I
Q
Q
t
SD
t
t
t
t
rr
gd
c
r
gs
f
f
g
rr
( )
( )
Turn-on Delay T ime
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay T ime
Fall T ime
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(Resistive Load, see fig. 3)
V
V
R
(Resistive Load, see fig. 3)
V
R
(Induct ive Load, see fig. 5)
I
I
V
(see test circuit, fig. 5)
SD
SD
DD
G
DD
DD
G
DD
G
DD
= 4.7
= 4.7
= 4.7
= 30 A
= 30 A
= 30 V
= 30 V
= 48 V
= 48 V I
= 30 V
Test Con ditions
Test Con ditions
Test Con ditions
V
D
GS
= 30 A V
= 0
Safe Operating Area for TO-220FP
di/dt = 100 A/ s
T
V
j
V
GS
V
GS
I
= 150
GS
GS
D
I
I
D
= 5 V
D
= 30 A
= 4.5 V
= 15 A
= 4.5 V
= 15 A
= 4.5 V
o
C
Min.
Min.
Min.
Typ.
Typ.
Typ.
0.18
105
4.5
25
20
10
50
20
15
40
60
80
8
STP30NE06L/FP
Max.
Max.
Max.
120
1.5
28
30
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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