RC28F256 Intel Corporation, RC28F256 Datasheet - Page 29

• Manufacturer Part Number: RC28F256
• Description: Intel StrataFlash Embedded Memory
• Manufacturer: Intel Corporation

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5.0
5.1
Warning:
Datasheet
Maximum Ratings and Operating Conditions
Absolute Maximum Ratings
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only.
Temperature under bias
Storage temperature
Voltage on any signal (except VCC, VPP)
VPP voltage
VCC voltage
VCCQ voltage
Output short circuit current
Notes:
1.
2.
3.
4.
5.
Temperature for 1-Gbit SCSP is –30 °C to +85 °C.
Voltages shown are specified with respect to V
signals and –0.2 V on V
periods < 20 ns. Maximum DC voltage on V
overshoot to V
is V
Maximum DC voltage on V
Program/erase voltage is typically 1.7 V – 2.0 V. 9.0 V can be applied for 80 hours maximum total, to
any blocks for 1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling
capability.
Output shorted for no more than one second. No more than one output shorted at a time.
CCQ
+ 0.5 V, which, during transitions, may overshoot to V
Intel StrataFlash
Order Number: 306666, Revision: 001
CC
+ 2.0 V for periods < 20 ns. Maximum DC voltage on input/output signals and V
Parameter
CC
, V
PP
CCQ
may overshoot to +11.5 V for periods < 20 ns.
®
Embedded Memory (P30)
, and V
PP
. During transitions, this level may undershoot to –2.0 V for
CC
SS
is V
. Minimum DC voltage is –0.5 V on input/output
CC
+ 0.5 V, which, during transitions, may
CCQ
–40 °C to +85 °C
–65 °C to +125 °C
–0.5 V to +4.1 V
–0.2 V to +10 V
–0.2 V to +2.5 V
–0.2 V to +4.1 V
100 mA
+ 2.0 V for periods < 20 ns.
Maximum Rating
1-Gbit P30 Family
April 2005
Notes
2,3,4
1
2
2
2
5
CCQ
29