IRG4BC20SDS International Rectifier Corp., IRG4BC20SDS Datasheet - Page 2

• Manufacturer Part Number: IRG4BC20SDS
• Description: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ( Vces=600v, Vce ( on ) Typ.=1.4v, @vge=15v, Ic=10a )
• Manufacturer: International Rectifier Corp.

IRG4BC20SD-S
Switching Characteristics @ T
Electrical Characteristics @ T
V
DV
V
V
D
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
fe
E
2
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/
D
/DT
T
J
J
Diode Peak Rate of Fall of Recovery
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
2.0
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.75
1.40
1.85
1.44
0.32
2.58
2.90
4.33
690 1040
480
980
800
550
124
240
210
-11
5.8
1.4
1.3
4.3
7.5
7.1
3.5
4.5
27
10
37
—
—
62
32
64
35
39
55
65
—
—
—
±100
1700
250
730
138
360
1.6
6.0
1.7
1.6
6.5
4.5
5.0
8.0
40
15
55
90
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nC
nH
pF
V
V
ns
ns
ns
V
S
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11,18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 10A
= 19A
= 10A, T
= 8.0A
= 8.0A, T
= 10A
= 10A, V
= 10A, V
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
C
J
C
CC
CC
J
CE
CE
C
C
See Fig.
See Fig.
= 150°C
Conditions
Conditions
= 250µA
= 1.0mA
See Fig.
See Fig.
= 150°C
G
G
C
= 250µA
= 250µA
= 480V
= 480V
= 600V
= 600V, T
See Fig. 10,11, 18
= 50W
= 50W
= 10A
14
15
17
16
See Fig. 8
See Fig. 7
V
See Fig. 2, 5
See Fig. 13
di/dt = 200Aµs
www.irf.com
V
J
GE
R
I
= 150°C
F
= 200V
= 8.0A
= 15V