IRG4BC20SDS International Rectifier Corp., IRG4BC20SDS Datasheet - Page 5

• Manufacturer Part Number: IRG4BC20SDS
• Description: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ( Vces=600v, Vce ( on ) Typ.=1.4v, @vge=15v, Ic=10a )
• Manufacturer: International Rectifier Corp.

www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
3.0
2.9
2.8
2.7
1000
800
600
400
200
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
J
C
1
CC
GE
Collector-to-Emitter Voltage
= 25
= 480V
= 15V
= 10A
R
10
V
G
CE
R
°
, Gate Resistance
G
C
V
C
C
C
Resistance
, Gate Resistance (W )
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
C res
C oes
C ies
20
=
=
=
=
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
30
f = 1MHz
gc ,
gc
C
ce
40
SHORTED
50
100
100
0.1
10
1
20
16
12
-60 -40 -20
Fig. 10 - Typical Switching Losses vs.
8
4
0
R
V
V
0
GE
CC
V
Fig. 8 - Typical Gate Charge vs.
G
I
CC
C
= 15V
= 480V
=
= 400V
= 10A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
50
Junction Temperature
5
J
Q , Total Gate Charge (nC)
W
G
0
10
20 40
IRG4BC20SD-S
15
60
80 100 120 140 160
20
I =
I =
I =
C
C
C
°
25
20
10
5
A
A
A
30
5