IRG4BC20SDS

Manufacturer Part NumberIRG4BC20SDS
DescriptionInsulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ( Vces=600v, Vce ( on ) Typ.=1.4v, @vge=15v, Ic=10a )
ManufacturerInternational Rectifier Corp.
IRG4BC20SDS datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
Page 7/10

Download datasheet (383Kb)Embed
PrevNext
100
V = 2 0 0 V
R
T = 1 2 5 °C
J
T = 2 5 °C
J
80
60
40
I = 4.0A
F
20
0
100
d i /d t - (A /µ s)
f
Fig. 14 - Typical Reverse Recovery vs. di
500
V = 2 0 0 V
R
T = 1 2 5 °C
J
T = 2 5 °C
J
400
300
I = 16A
F
200
I = 8.0A
F
100
0
100
d i /d t - (A /µ s)
f
Fig. 16 - Typical Stored Charge vs. di
www.irf.com
100
I = 16A
F
I = 8.0A
F
10
1000
Fig. 15 - Typical Recovery Current vs. di
/dt
f
10000
1000
I = 4.0A
F
100
1000
/dt
f
IRG4BC20SD-S
V = 2 0 0 V
R
T = 1 2 5 °C
J
T = 2 5 °C
J
I = 16A
F
I = 8.0 A
F
1
100
d i /d t - (A /µ s)
f
V = 2 0 0 V
R
T = 1 2 5 °C
J
T = 2 5 °C
J
I = 4.0A
F
I = 8.0 A
F
I = 16A
F
100
d i /d t - (A /µ s)
f
Fig. 17 - Typical di
/dt vs. di
(rec)M
I = 4.0A
F
1000
/dt
f
1000
/dt
f
7