IRG4BC20SDS International Rectifier Corp., IRG4BC20SDS Datasheet - Page 3

• Manufacturer Part Number: IRG4BC20SDS
• Description: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ( Vces=600v, Vce ( on ) Typ.=1.4v, @vge=15v, Ic=10a )
• Manufacturer: International Rectifier Corp.

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100
10
3.0
2.0
1.0
0.0
Fig. 2 - Typical Output Characteristics
1
0.0
0.1
T = 150 C
J
S q u a re w a v e :
V
CE
°
1.0
, Collector-to-Emitter Voltage (V)
60% of rated
Id e a l d io d es
I
T = 25 C
voltage
J
2.0
°
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15V
(Load Current = I
3.0
1
4.0
f, Frequency (KHz)
RMS
of fundamental)
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
T = 150 C
J
6
V
GE
10
o
, Gate-to-Emitter Voltage (V)
7
T = 25 C
F or b oth:
D uty c y c le : 50 %
T = 12 5° C
T
G a te d riv e a s s pe c ified
P ow er D is s ipation =
J
J
sink
8
IRG4BC20SD-S
= 90 °C
o
9
V
5µs PULSE WIDTH
CC
= 50V
10
1.7
W
11
100
12
3