GI858 Vishay Siliconix, GI858 Datasheet
GI858
Related parts for GI858
GI858 Summary of contents
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... GI851 V 50 RRM V 35 RMS RSM I F(AV ° FSM STG GI850 thru GI858 Vishay General Semiconductor GI852 GI854 GI856 100 200 400 600 70 140 280 420 100 200 400 600 150 250 450 650 3.0 100 - 150 DiodesEurope@vishay ...
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... GI850 thru GI858 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum 3.0 A instantaneous 9.4 A forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery current dI/ A/μs, I Maximum reverse recovery time dI/ A/μs, I Typical junction 4 MHz ...
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... T = 100 ° ° ° 100 DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 0.052 (1.32) 0.048 (1.22) DIA. GI850 thru GI858 Vishay General Semiconductor 100 ° 1.0 MHz sig Reverse Voltage (V) Fig Typical Junction Capacitance 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. DiodesEurope@vishay.com p-p 100 www ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...