SI9400DY Vishay Siliconix, SI9400DY Datasheet - Page 4

• Manufacturer Part Number: SI9400DY
• Description: P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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4
Si9400DY
Vishay Siliconix
0.01
0.1
–0.5
20
10
2
1
1.0
0.5
0.0
10
1
–1
–50
–4
0
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
I
T
–25
D
J
= 250 A
0.4
= 150 C
V
SD
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.8
J
– Temperature ( C)
25
10
–3
1.2
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
1.6
= 25 C
100
2.0
125
10
–2
Square Wave Pulse Duration (sec)
150
2.4
10
–1
100
80
60
40
20
0
0.8
0.6
0.4
0.2
0.001
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 2.5 A
2
0.01
V
1
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
– Gate-to-Source Voltage (V)
DM
JM
– T
4
t
1
A
0.1
= P
t
2
DM
Z
thJA
S-55458—Rev. K, 02-Mar-98
thJA
6
t
t
Document Number: 70119
1
2
(t)
= 62.5 C/W
10
1
8
30
10
10