SI9802DY Vishay Siliconix, SI9802DY Datasheet - Page 4

• Manufacturer Part Number: SI9802DY
• Description: Dual N-Channel Reduced Qg/ Fast Switching MOSFET
• Manufacturer: Vishay Siliconix

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4
Si9802DY
Vishay Siliconix
–0.0
–0.2
–0.4
–0.6
–0.8
30
10
0.4
0.2
0.01
1
0.1
–50
0
2
1
10
–4
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
V
SD
Single Pulse
T
0
J
0.4
– Source-to-Drain Voltage (V)
= 150 C
Threshold Voltage
T
J
– Temperature ( C)
I
D
0.6
= 250 A
10
50
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
T
J
1.0
100
= 25 C
1.2
10
–2
Square Wave Pulse Duration (sec)
150
1.4
10
–1
0.15
0.12
0.09
0.06
0.03
50
40
30
20
10
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
2
1
P
0.1
– Gate-to-Source Voltage (V)
DM
Single Pulse Power
JM
– T
t
A
I
1
Time (sec)
D
= P
= 4.5 A
t
2
DM
4
Z
thJA
thJA
t
t
1
1
2
(t)
S-51303—Rev. A, 19-Dec-96
= 62.5 C/W
Document Number: 70625
10
6
10
30
30
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