BFR180W Infineon Technologies Corporation, BFR180W Datasheet

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BFR180W

Manufacturer Part Number
BFR180W
Description
NPN Silicon RF Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
NPN Silicon RF Transistor


ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BFR180W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Total power dissipation, T
Junction - soldering point
1 T
2 For calculation of R
For low-power amplifiers in mobile
f
communication systems (pager) at collector
currents from 0.2 mA to 2.5 mA
F = 2.1 dB at 900 MHz
T
S
= 7 GHz
is measured on the collector lead at the soldering point to the pcb
thJA
please refer to Application Note Thermal Resistance
Marking
RDs
2)
S

126 °C
1 = B
1)
Pin Configuration
1
2 = E
Symbol
V
V
V
V
I
I
P
T
T
T
R
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
3 = C
3
-65 ... 150
-65 ... 150
Value

150
0.5
10
10
30
790
8
2
4
Package
SOT323
Jun-13-2001
BFR180W
1
VSO05561
Unit
V
mA
mW
°C
K/W
2

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BFR180W Summary of contents

Page 1

... Application Note Thermal Resistance thJA Pin Configuration Symbol V CEO V CES V CBO V EBO 126 °C tot  stg R thJS 1 BFR180W 3 1 VSO05561 Package SOT323 Value Unit 0 150 °C -65 ... 150 -65 ... 150  K/W 790 Jun-13-2001 2 ...

Page 2

... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CES I CBO I EBO BFR180W Values Unit min. typ. max 100 µ 100 µA 30 100 200 - Jun-13-2001 ...

Page 3

... 900 MHz f = 1.8 GHz 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt |S 21e = BFR180W Values min. typ. max 0.3 0. Jun-13-2001 Unit GHz pF dB ...

Page 4

... 20.325 - IKR = 0.012138 1.4255  RE = 3.7045  VJE = 1.1812 V XTF = 0.3062 - PTF = 0 deg MJC = 0.30423 - CJS = 0 fF XTB = 0.87906 - 4 BFR180W NF = 1.0236 - ISE = 130. 0.93013 - ISC = 6.1852 fA IRB = 0. 0.56  MJE = 0.41827 - VTF = 0.22023 V CJC = 183.69 fF XCJC = 0.08334 - VJS = 0. 1.11 ...

Page 5

... tot S 120 °C 100 150 T S Permissible Pulse Load = thJS p P totmax BFR180W / totDC 0.005 0.01 0.02 0.05 0.1 0.2 0 Jun-13-2001 - ...

Page 6

... Transition frequency Parameter CE 10 GHz Power Gain 1.8GHz V = Parameter CE 15 10V 0.7V 5 BFR180W = 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA Jun-13-2001 10V 8V 5V ...

Page 7

... CE 20 dBm 0.9GHz 12 8 1.8GHz 4 0.9GHz 0 1.8GHz -4 -8 -12 -16 - Power Gain | 10V 2.5 GHz 3.5 0 BFR180W =Z = f(f) 21 Parameter I =1mA C 0.5 1.0 1.5 2.0 2.5 Jun-13-2001 =f 10V 2V 0.7V GHz 3.5 f ...

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