BFR180W Infineon Technologies Corporation, BFR180W Datasheet - Page 7

• Manufacturer Part Number: BFR180W
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Power Gain G
f = Parameter
Power Gain G
V
CE
dB
dB
= Parameter
16
12
10
25
15
10
8
6
4
2
0
5
0
0.0
0
I
C
I
C
=1mA
=1mA
0.5
2
ma
ma
1.0
, G
| S
4
, G
21
ms
1.5
|
ms
2
= f(V
= f(V
6
= f(f)
2.0
CE
CE
8
):---------
2.5
):_____
0.9GHz
1.8GHz
0.9GHz
1.8GHz
GHz
V
10V
2V
0.7V
V
f
CE
3.5
12
7
Intermodulation Intercept Point IP
(3rd order, Output, Z
Power Gain |S
V
V
CE
CE
dBm
dB
-12
-16
-20
= Parameter, f = 900MHz
20
12
11
=
-4
-8
8
4
0
9
8
7
6
5
4
3
2
1
0
0.0
0
Parameter
I
C
=1mA
0.5
1
21
1.0
|
2
S
= f(f)
=Z
1V
2
1.5
L
=50
2.0
2V


3
)
Jun-13-2001
2.5
BFR180W
mA
GHz
3
10V
2V
0.7V
=f(I
I
f
C
8V
5V
3V
3.5
C
5
)