HS1B-1245RH-Q Intersil Corporation, HS1B-1245RH-Q Datasheet - Page 4

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HS1B-1245RH-Q

Manufacturer Part Number
HS1B-1245RH-Q
Description
Radiation Hardened, Dual, High Speed, Low Power Video Operational Amplifier With Output Disable
Manufacturer
Intersil Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HS1B-1245RH-Q
Manufacturer:
INTERS
Quantity:
246
Die Characteristics
DIE DIMENSIONS:
INTERFACE MATERIALS:
Glassivation:
Top Metallization:
Substrate:
Backside Finish:
Metallization Mask Layout
NOTE: This is an optional GND pad. Users may set a GND reference, via this pad, to ensure the TTL compatibility of the DISABLE inputs when
using asymmetrical supplies (e.g., V+ = 10V, V- = 0V). See the “Application Information” section for details.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
69 mils x 92 mils x 19 mils 1 mil
1750 x 2330 x 355 m 25.4 m
Type: Nitride
Thickness: 4k
Type: Metal 1: AICu(2%)/TiW
Type: Metal 2: AICu(2%)
Thickness: Metal 1: 8k
Thickness: Metal 2: 16k
UHF-1X, Bonded Wafer, DI
Silicon
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Å
0.5k
Å
Å
Å
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
DISABLE2
DISABLE1
0.4k
4
0.8k
Å
+IN1
+IN2
Å
V-
-IN1
HS-1245RH
HS-1245RH
-IN2
V-
OUT1
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
ADDITIONAL INFORMATION:
Worst Case Current Density:
Transistor Count:
Floating
< 2 x 10
150
GND (NOTE)
V-
5
A/cm
V
L
2
NC
OUT2
V+
NC

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