RF1S30P05SM Intersil Corporation, RF1S30P05SM Datasheet

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RF1S30P05SM

Manufacturer Part Number
RF1S30P05SM
Description
30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs
Manufacturer
Intersil Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF1S30P05SM
Manufacturer:
KA/INTRISII
Quantity:
12 500
30A, 50V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be
operated directly from integrated circuits.
Formerly developmental type TA09834.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.
Packaging
RFG30P05
RFP30P05
RF1S30P05SM
PART NUMBER
SIDE METAL)
(BOTTOM
DRAIN
JEDEC STYLE TO-247
TO-247
TO-220AB
TO-263AB
PACKAGE
4-126
Data Sheet
RFG30P05
RFP30P05
F1S30P05
SOURCE
DRAIN
BRAND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
GATE
GATE
SOURCE
JEDEC TO-263AB
RFG30P05, RFP30P05, RF1S30P05SM
http://www.intersil.com or 407-727-9207
Features
• 30A, 50V
• r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
(FLANGE)
Components to PC Boards”
DRAIN
o
C Operating Temperature
(FLANGE)
= 0.065
DRAIN
PSPICE® is a registered trademark of MicroSim Corporation.
July 1999
JEDEC TO-220AB
G
|
Copyright
File Number 2436.4
D
S
©
®
SOURCE
Intersil Corporation 1999
Model
DRAIN
GATE

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