MA26111 Panasonic Semiconductor, MA26111 Datasheet
MA26111
Manufacturer Part Number
MA26111
Description
Silicon epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.MA26111.pdf
(2 pages)
Switching Diodes
MA26111
Silicon epitaxial planar type
For switching circuits
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Note) * : t = 1 s
Electrical Characteristics
Electrical Characteristics
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: May 2005
Allowing high-density mounting
Allowing high-density mounting
Short reverse recovery time t
Short reverse recovery time t
Small terminal capacitance C
Small terminal capacitance C
High breakdown voltage: V
High breakdown voltage: V
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
Short reverse recovery time t
Short reverse recovery time t
High breakdown voltage: V
High breakdown voltage: V = 80 V
2. Absolute frequency of input and output is 100 MHz
3. . * : t
rr
rr
rr
measurement circuit
measurement circuit
Parameter
Parameter
*
Pulse Generator
(PG-10N)
R
s
R
R
R
R
= 50 Ω
rr
rr
t
= 80 V
Bias Application Unit (N-50BU)
T
a
a
a
= 25
= 25
T
a
a
a
*
A A
= 25
= 25
°C±3°C
Symbol
Symbol
V
V
V
I
I
T
T
T
V
°C
FSM
T
T
T
I
FM
RM
RM
stg
stg
V
V
V
V
V
V
F
C
R
I
t
t
t
j
j
Wave Form Analyzer
(SAS-8130)
R
R
rr
rr
R
R
F
F
t
i
= 50 Ω
–55 to +125
Rating
I
I
V
V
I
R
R
R = 100
F
R
R
R
F
100
225
500
125
L
L
L
L
R
R
R
R
R
R
80
80
= 100 mA
= 10 mA, V
= 100
= 100
= 100
= 75 V
= 75 V
= 0, f = 1 MHz
= 0, f = 1 MHz
SKF00068AED
µA
Ω
R
R
R
Unit
Conditions
mA
mA
mA
°C
°C
V
V
= 6 V, I
= 6 V, I
V
R
t
r
rr
rr
rr
Input Pulse
10%
t
t
t = 2 µs
t
δ = 0.05
p
p
r
= 0.1 I
= 0.1 I
90%
= 0.35 ns
t
t
t
p
p
Marking Symbol: 1
R
R
R
1: Anode
2: Cathode
,
,
t
2
I
F
1.00
I
V
R
Min
Output Pulse
F
80
±0.05
L
R
= 10 mA
= 100 Ω
= 6 V
t
I
rr
rr
= 0.1 I
1
0.95
Typ
0.6
2
t
0.25
R
±0.05
0.65
ML-2-N1 Package
Max
0.39
100
1.2
2
3
±0.01
+0.01
0.25
−0.03
±0.05
0.01
Unit: mm
1
0.05
Unit
±0.005
nA
pF
ns
V
V
±0.03
1
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MA26111 Summary of contents
Page 1
... Switching Diodes MA26111 Silicon epitaxial planar type For switching circuits Features Features Allowing high-density mounting Allowing high-density mounting Short reverse recovery time t Short reverse recovery time t Short reverse recovery time t Short reverse recovery time t ...
Page 2
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...