HP42C SHANTOU HUASHAN, HP42C Datasheet
HP42C
Manufacturer Part Number
HP42C
Description
PNP SILICON TRANSISTOR
Manufacturer
SHANTOU HUASHAN
Datasheet
1.HP42C.pdf
(2 pages)
www.DataSheet.in
H
H
V
V
BV
Symbol
FE（1）
FE（2）
I
I
I
CE(sat)
BE(on)
CEO
EBO
CES
f
█ ELECTRICAL CHARACTERISTICS（T
CEO
T
█ APPLICATIONS
T
T
P
P
V
V
V
I
I
█ ABSOLUTE MAXIMUM RATINGS（T
C
B
C
C
stg
j
CBO
CEO
EBO
——Collector Current……………………………………………-6A
——Junction Temperature…………………………………150℃
——Base Current……………………………………………-2A
——Collector Dissipation（T
——Collector Dissipation （T
——Storage Temperature………………………… -55~150℃
Medium Power Linear Switching Application.
——Collector-Emitter Voltage……………………………-100V
——Collector-Base Voltage………………………………-100V
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter
Collector Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
——Emitter-Base Voltage………………………………-5V
Shantou Huashan Electronic Devices Co.,Ltd.
Cut-off Current
Characteristics
A
c
=25℃）…………………………65W
=25℃） ………………………… 2W
-100
Min
3.0
30
15
Typ
a
a
=25℃）
=25℃）
-0.7
-400
-1.5
-2.0
Max
-1
75
MHz
PNP S I L I C O N T R A N S I S T O R
Unit
μA
mA
mA
V
V
V
TO-220
HP42C
I
V
V
V
V
V
I
V
V
C
C
f=1MHz
CE
EB
CE
CE
CE
CE
CE
=-30mA, I
=-6A, I
1―Base，B
2―Collector， C
3― Emitter，E
=-60V, I
=-5V, I
=-100V, V
=-4V, I
=-4V, I
=-4V, I
=-10V, I
Test Conditions
B
=-600mA
C
C
C
C
=0
=-0.3A
=-3A
=-6A
B
C
=0
=-500mA,
B
EB
=0
=0
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HP42C Summary of contents
Page 1
... A =25℃） a Min Typ -100 30 15 3.0 PNP HP42C TO-220 1―Base，B 2―Collector， C 3― Emitter，E Max Unit Test Conditions V I =-30mA, I ...
Page 2
... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet.in HP42C ...