KSH13009H SHANTOU HUASHAN, KSH13009H Datasheet
KSH13009H
Manufacturer Part Number
KSH13009H
Description
NPN SILICON TRANSISTOR
Manufacturer
SHANTOU HUASHAN
Datasheet
1.KSH13009H.pdf
(3 pages)
www.DataSheet.in
█ ELECTRICAL CHARACTERISTICS（T
BV
I
H
H
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
Cob
f
t
t
t
T
ON
STG
F
█ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ
█ ABSOLUTE MAXIMUM RATINGS（T
EBO
ＣＥ（ｓａｔ１）
ＣＥ（ｓａｔ２）
ＣＥ（ｓａｔ３）
ＢＥ（ｓａｔ１）
ＢＥ（ｓａｔ２）
T
T
P
V
V
V
I
I
FE（1）
FE（2）
Symbol
C
B
C
stg
j
CBO
CEO
EBO
CEO
——Collector Current（DC）……………………………… 12A
——Base Current……………………………………………6A
——Junction Temperature……………………………… 150℃
——Collector Dissipation （T
——Storage Temperature………………………… －５5~150℃
——Collector-Emitter Voltage………………………… 400V
——Collector-Base Voltage…………………………… 700V
——Emitter-Base Voltage……………………………… 9V
High Speed Switching
Suitable for Switching Regulator and Montor Control
Shantou Huashan Electronic Devices Co.,Ltd.
Collector- Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
Characteristics
c
=25℃） …………………… 130W
a
４００
Min
a
=25℃）
=25℃）
８
６
４
１８０
Typ
N P N S I L I C O N T R A N S I S T O R
Max
１．５
１．２
１．６
１．１ μs
３．０ μs
０．７ μs
４０
３０
１
１
３
KSH13009H
TO-3P
Unit
ＭＨｚ
1―
2―Collector，C
3―Emitter, E
ｍＡ V
ｐＦ V
Ｖ I
Ｖ I
Ｖ I
Ｖ I
Ｖ I
Ｖ I
Base，B
V
V
V
C
C
C
C
C
C
CE
EB
CE
CE
CB
=10mA, I
=5A, I
=8A, I
=12A, I
=5A, I
=8A, I
V
I
ＲＬ＝１５．６
=10V
B1
=9V, I
=5V, I
=5V, I
=10V,f=0.1MHz
CC
=1.6A,I
Test Conditions
=125V, I
B
B
B
B
,I
=1A
=1.6A
B
=1A
=1.6A
C
C
C
C
=3A
=0
=5A
=8A
Ω
=0.5A
B
=0
B2
=-1.6A
C
=8A,
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KSH13009H Summary of contents
Page 1
... KSH13009H TO-3P 1― Base，B 2―Collector，C 3―Emitter, E Typ Max Unit Test Conditions ...
Page 2
... KSH13009H ...
Page 3
... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13009H ...