ISL73096RH Intersil Corporation, ISL73096RH Datasheet
ISL73096RH
Manufacturer Part Number
ISL73096RH
Description
The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Lat
Manufacturer
Intersil Corporation
Datasheet
1.ISL73096RH.pdf
(2 pages)
Radiation Hardened Ultra High Frequency
NPN-PNP Transistor Array
The ISL73096RH is a radiation hardened transistor array
consisting of three NPN transistors and two PNP transistors
on a common substrate. One of our bonded wafer,
dielectrically isolated fabrication processes provides an
immunity to Single Event Latch-up and the capability of
highly reliable performance in any radiation environment.
The high gain-bandwidth product and low noise figure of
these transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-07218. A “hot-link” is provided
on our website for downloading.
Pinout
Q1B
Q1E
Q1C
Q2E
Q2B
Q2C
Q3E
Q3B
(16 LD SBDIP) CDIP2-T16
1
2
3
4
5
6
7
8
ISL73096RH
Q
Q
TOP VIEW
3
2
Q
®
1
1
Q
Q
5
4
Data Sheet
16
15
14
13
12
11
10
9
NC
Q5C
Q5B
Q5E
Q4C
Q4B
Q4E
Q3C
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Electrically Screened to SMD # 5962-07218
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
• NPN Gain Bandwidth Product (F
• NPN Current Gain (h
• NPN Early Voltage (V
• PNP Gain Bandwidth Product (F
• PNP Current Gain (h
• PNP Early Voltage (V
• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)
• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)
Applications
• High Frequency Amplifiers and Mixers
• High Frequency Converters
• Synchronous Detectors
Ordering Information
5962F0721801V9A
ORDERING NUMBER
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 10
- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation
- Refer to Application Note AN9315
March 29, 2007
All other trademarks mentioned are the property of their respective owners.
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2007. All Rights Reserved
FE
FE
A
ISL73096RHVX
A
) . . . . . . . . . . . . . . . . . . . 50V (Typ)
) . . . . . . . . . . . . . . . . . . . 20V (Typ)
). . . . . . . . . . . . . . . . . . . 130 (Typ)
). . . . . . . . . . . . . . . . . . . . 60 (Typ)
MKT. NUMBER
INTERNAL
T
T
ISL73096RH
). . . . . . . . 5.5GHz (Typ)
) . . . . . . . . .8GHz (Typ)
TEMP. RANGE
FN6475.0
-55 to +125
5
(°C)
RAD(Si)
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ISL73096RH Summary of contents
Page 1
... Data Sheet Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment ...
Page 2
... No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 ISL73096RH ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION: Worst Case Current Density 3. A/cm Transistor Count: 5 ISL73096RH. FN6475.0 March 29, 2007 ...