STGW50H65F STMicroelectronics, STGW50H65F Datasheet

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STGW50H65F

Manufacturer Part Number
STGW50H65F
Description
50 A, 650 V Field Stop Trench Gate Igbt
Manufacturer
STMicroelectronics
Datasheet

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Features
Applications
Description
Using advanced proprietary trench gate and field
stop structure, this IGBT leads to an optimized
compromise between conduction and switching
losses maximizing the efficiency for high
switching frequency converters. Furthermore, a
slightly positive V
and a very tight parameter distribution result in an
easier paralleling operation.
Table 1.
April 2011
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Very high speed switching
Tight parameters distribution
Easy paralleling
Low thermal resistance
Photovoltaic inverters
Uninterruptible power supply
Power factor correction
High switching frequency converters
STGW50H65F
Order code
Device summary
CE(sat)
temperature coefficient
GW50H65F
Marking
Doc ID 018671 Rev 1
50 A, 650 V field stop trench gate IGBT
Figure 1.
Package
TO-247
Internal schematic diagram
STGW50H65F
TO-247
1
Packaging
2
3
Tube
Preliminary data
www.st.com
1/9
9

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STGW50H65F Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice 650 V field stop trench gate IGBT Figure 1. Marking Package GW50H65F TO-247 Doc ID 018671 Rev 1 STGW50H65F Preliminary data TO-247 Internal schematic diagram Packaging Tube www ...

Page 2

... Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol R Thermal resistance junction-case thJC R Thermal resistance junction-ambient thJA 2/9 Parameter = ° 100 ° °C C Parameter Doc ID 018671 Rev 1 STGW50H65F Value Unit 650 V 100 200 A ±20 V 360 150 °C Value Unit 0.35 °C/W 50 ...

Page 3

... STGW50H65F 2 Electrical characteristics °C unless otherwise specified. J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ( Gate-emitter leakage I GES current (V Table 5. Dynamic Symbol Input capacitance C ies Output capacitance C oes ...

Page 4

... Turn-off losses include also the tail of the collector current. 4/9 Parameter Test conditions V = 400 4.7 Ω 400 4.7 Ω 125 °C J Doc ID 018671 Rev 1 STGW50H65F Min. Typ. Max. TBD = 0 TBD = 50 A, TBD 1.1 GE TBD Figure 2 ...

Page 5

... STGW50H65F 3 Test circuits Figure 2. Test circuit for inductive load switching Figure 4. Switching waveform Td(off) Td(on) Tr(Ion) Ton Figure 3. AM01504v1 90% 10% 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 018671 Rev 1 Test circuits Gate charge test circuit AM01505v1 5/9 ...

Page 6

... ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 8. TO-247 mechanical data Dim ∅P ∅R S 6/9 mm Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 018671 Rev 1 STGW50H65F ® Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 7

... STGW50H65F Figure 5. TO-247 drawing Doc ID 018671 Rev 1 Package mechanical data 0075325_F 7/9 ...

Page 8

... Revision history 5 Revision history Table 9. Document revision history Date 28-Apr-2011 8/9 Revision 1 Initial release. Doc ID 018671 Rev 1 STGW50H65F Changes ...

Page 9

... STGW50H65F Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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