STGW50H65F STMicroelectronics, STGW50H65F Datasheet - Page 4

• Manufacturer Part Number: STGW50H65F
• Description: 50 A, 650 V Field Stop Trench Gate Igbt
• Manufacturer: STMicroelectronics

Electrical characteristics
4/9
Table 7.
1.
2. Turn-off losses include also the tail of the collector current.
Symbol
Eon
Eon
E
E
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C).
Eon is the turn-on losses when a typical diode is used in the test circuit in
off
off
E
E
ts
ts
(2)
(2)
(1)
(1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching energy (inductive load)
Parameter
Doc ID 018671 Rev 1
V
R
V
R
T
J
CE
CE
G
G
= 125 °C
= 4.7 Ω, V
= 4.7 Ω, V
= 400 V, I
= 400 V, I
Test conditions
GE
GE
C
C
= 50 A,
= 50 A,
= 15 V
= 15 V
Figure
Min.
2. If the IGBT is offered in
-
-
Typ.
TBD
TBD
TBD
TBD
0.8
1.1
STGW50H65F
Max.
-
-
Unit
mJ
mJ
mJ
mJ
mJ
mJ